|About this Abstract
||2017 TMS Annual Meeting & Exhibition
||Emerging Interconnect and Pb-free Materials for Advanced Packaging Technology
||The Effect of Interlayer on Abnormal Grain Growth of Nanotwinned Copper Thin Film during Annealing Process
||Leh-Ping Chang, Hsin-Yuan Chen, Fan-Yi Ouyang
|On-Site Speaker (Planned)
Cu nanotwins have been demonstrated to exhibit excellent electrical and mechanical properties as interconnects in the electronic industry. In this study, we investigate the effect of interlayers, CrN and TiN, on microstructure and thermal stability of highly pure nano-twinned Cu thin film fabricated by unbalanced magnetron sputtering system. After deposition, the samples with different interlayers were subject to anneal at 250℃ in vacuum for 30 to 120 minutes. For as-deposited samples, the Cu thin film with high density nanotwin (111) structure was observed inboth interlayer samples. After isothermal annealing, some abnormal (200) grain growth were found in the samples with CrN interlayer; however, there was no significant microstructural change in the samples with TiN interlayer. The results suggest that the thermal stability of nanotwinned Cu thin film is strongly affected to the interlayer and the samples with TiN interlayer shows better thermal stability than CrN interlayers.
||Planned: Supplemental Proceedings volume