|About this Abstract
||2016 TMS Annual Meeting & Exhibition
||Mechanical Behavior at the Nanoscale III
||W-22: Stress Generation and Localization during Thin Film Coalescence Processes
||Murat Al, Edmund Webb
|On-Site Speaker (Planned)
This study will elucidate stress manifestation during nanometer scale film growth processes. Coalescence in monolayer films of Au on Ni substrates was modeled with molecular dynamics simulations. To model coalescence, a defect was introduced by removing Au atoms in a line along one of the periodic dimensions in the plane of the film. Subsequent simulations allowed model films to coalesce and stress distribution in the film was computed as a function of time over simulations spanning of order one microsecond. The dependence of stress magnitude and spatial extent on film dimensions was revealed, permitting a thermodynamic limit analysis of the peak stress and spatial extent. Both quantities exhibited convergence with system size and the spatial extent of stress was limited to approximately twenty times the initial defect width. The peak stress limit was dependent on the method of calculation; however, it was significantly higher than expected due to localization.
||Planned: A print-only volume