|About this Abstract
||Materials Science & Technology 2012
||Sosman Award Symposium: Local Phenomena at Surfaces and Interfaces
||Enhanced Oxygen Grain Boundrary Diffusion in Al2O3: Its not as Simple as You Might Think
||Arthur H Heuer, David Hovis, Tsubasa Nakagawa
|On-Site Speaker (Planned)
||Arthur H Heuer
The mechanism of enhanced oxygen grain boundary diffusion in dense Al<SUB>2</SUB>O<SUB>3</SUB> ceramics, in CLS bicrystal boundaries, and in Al<SUB>2</SUB>O<SUB>3</SUB> scales has been studied using TOF-SIMS. All grain boundaries are not equal! Diffusivities differing by a factor of 10<SUP>3</SUP> along ostensibly similar CSL boundaries, and differing by factors of up to 200 along adjacent random grain boundaries have been measured. These results are inconsistent with the generally held view that grain boundary diffusion is similar to lattice diffusion i.e. it is mediated by point defect jumping; rather, grain boundary diffusion is believed to occur by climb of grain boundary dislocations.