|About this Abstract
||2018 TMS Annual Meeting & Exhibition
||Recent Developments in Biological, Structural and Functional Thin Films & Coatings
||Structural and Optical Properties of Tungsten Doped Hafnium Oxide Nanocrystalline Thin Films
||Marlyn Torres, Ann Uribe, Chintalapalle Ramana
|On-Site Speaker (Planned)
Hafnium oxide (HfO2) is a high temperature refractory material with a high chemical stability, wide band gap (Eg ~5.7 eV) and a high dielectric constant (k ~25). While there are efforts in the literature on the effect of metal doping (such as Al, Cu) to tune the structural and electronic properties of HfO2 films, not much is known about tungsten (W) doping effects into HfO2. However, doping the refractory metal (such as W) into a hard dielectric (HfO2) will have implications to design materials and devices for advanced device applications. In the present work, W-doped HfO2 thin films were deposited by radio frequency magnetron sputtering, where the amount of W into HfO2 is varied. X-ray diffraction (XRD) studies indicate the predominant (-111) peak of the monoclinic HfO2, while the incorporation of W induces amorphization. Based on the experimental data and analyses, a structure-composition-property relationship in W-doped HfO2 films is established.
||Planned: Supplemental Proceedings volume