|About this Abstract
||2018 TMS Annual Meeting & Exhibition
||Frontiers in Advanced Functional Thin Films and Nanostructured Materials
||Effect of Process Parameters on Phase Stability and Metal-insulator Transition of Vanadium Dioxide (VO2) Thin Films by Pulsed Laser Deposition (PLD)
||Ryan McGee, Ankur Goswami, Kalvin Schofield, Thomas Thundat
|On-Site Speaker (Planned)
The thermally induced (Tc=340K) phase transition in VO2 from low temperature monoclinic to high temperature tetragonal is accompanied by an abrupt change in the electronic and optical properties. Controlling the synthesis of the correct phase is a major issue with VO2 production due to the immense number of vanadium oxides. Here we provide detailed insight into the influence of PLD process variable on the deposition of VO2. Utilizing the Taguchi method, we studied the synergistic effect of gas pressure, substrate temperature, target-substrate distance, and laser energy on the phase formation and stability of VO2 films on Si/SiO2 substrates. We stabilized three major polymorphs of VO2; monoclinic, tetragonal, and triclinic. Evidence of the MIT was indicated by a sudden decrease in resistance at 50-60 °C, which was highly dependant on processing. Further Taguchi analysis elucidated the effect of each process variable on films roughness, thickness, and grain size.
||Planned: Supplemental Proceedings volume