|About this Abstract
||2016 TMS Annual Meeting & Exhibition
||2016 Functional Nanomaterials: Emerging Nanomaterials and Techniques for 3D Architectures
||Flip-Chip GaN LEDs Using Photoelectrochemical Liftoff
||David Hwang, Benjamin Yonkee, Burhan Saifaddin, Steven P. DenBaars
|On-Site Speaker (Planned)
The gallium nitride (GaN) materials system is an extremely important one in the optoelectronics industry and in particular, solid state light-emitting diodes (LEDs). The bandgap of GaN can be tuned between 0.7 and 6.2 eV by adding indium and aluminum. In this talk, we report on novel processing techniques to fabricate flip-chip LEDs. LED films emitting in the blue region (λ = 450 nm) are grown by metalorganic chemical vapor deposition (MOCVD) on bulk c-plane GaN substrates. The devices are transferred to a separate submount by the use of a photoelectrochemical (PEC) etch, thereby removing the original GaN substrate. With these separated LEDs, roughening techniques can be done to increase the light extraction from the devices and thus increase the external quantum efficiency (EQE).
This work is supported by King Abdulaziz City for Science and Technology (KACST).