|About this Abstract
||Materials Science & Technology 2009
||Characterization and Modeling of Ceramic-Ceramic and Metal-Ceramic Interfaces
||Characterization of Physics, Chemistry, and Microstructure at Metal-Semiconductor and Oxide-SiC Interfaces and Effects on Electronic Properties
||Lisa M. Porter, Jim Bentley, Leonard J. Brillson, Kai-Chieh Chang, Robert F. Davis, Daniel J. Ewing, Li Huang, Fang Liu, Dorothy Lukco, Jacob H. Melby, Anita Lloyd Spetz, Serhii Tumakha, Ariel Virshup, Quamar Wahab
|On-Site Speaker (Planned)
||Lisa M. Porter
The performance of modern semiconductor devices is determined by the physics, chemistry and microstructure at interfaces between metal-ceramic (e.g., contact-semiconductor) and ceramic-ceramic (e.g., oxide-semiconductor) interfaces. In this presentation I will focus on nanoscale interfacial phenomena, such as residual reaction products and defects, which can control electrical performance in semiconductor devices. In such cases complementary characterization techniques, such as energy-filtered transmission electron microscopy, electron energy-loss spectroscopy, depth-resolved cathodoluminescence spectroscopy, and electrical measurements, become valuable tools to identify and understand the role of specific interfacial phenomena on device performance. Examples will include degradation of ohmic contacts to SiC, epitaxial InGaN interlayers for ohmic contacts to p-type GaN, defects in inhomogeneous SiC Schottky diodes, and carbon nanoclusters at the SiO<SUB>2</SUB>-SiC interface. Direct correlations between the materials characterizations and electrical properties will be presented.