|About this Abstract
||2018 TMS Annual Meeting & Exhibition
||Frontiers in Advanced Functional Thin Films and Nanostructured Materials
||How Good those are Mechanically Exfoliated MoS2 Mono Layered Devices at the Atomic Level?
||L. M. Martinez, C. Saiz, J. van Tol, Srinivasa Rao Singamaneni
|On-Site Speaker (Planned)
||L. M. Martinez
The broad current interdisciplinary research effort on layered two-dimensional (2D) transition metal dichalcogenides such as MoS2 and WS2 is a hot topic in the community for next generation nanoelectronic devices beyond CMOS. The large fraction of the researchers fabricates MoS2 nano layered devices by mechanical exfoliation of bulk MoS2 naturally grown crystals to achieve highest electron mobilities. The performance and longevity of those devices strongly determined by the intrinsic and extrinsic defects present in those bulk MoS2 crystals. This work deals with the atomic level identification of those defects in MoS2 bulk crystals using exclusive spin-sensitive technique, electron spin resonance spectroscopy. Our comprehensive experimental findings show that MoS2 has intrinsic sulphur vacancies in addition to strong extrinsic impurities such as rhenium, and trace amounts of Fe or Ni. This study strongly suggests considering the deleterious effects of these extrinsic defects while accounting for physical and chemical properties of 2D materials.
||Planned: Supplemental Proceedings volume