|About this Abstract
||2016 TMS Annual Meeting & Exhibition
||Phase Stability, Phase Transformations, and Reactive Phase Formation in Electronic Materials XV
||Morphological Stability of Interfaces under Electromigration Condition: Insights from Phase-field Study
||Arnab Mukherjee, Kumar Ankit, Britta Nestler
|On-Site Speaker (Planned)
Voiding by electromigration remains the prime cause of failure in integrated circuits. In the present work, a phase-field method is employed to study two problems pertaining to the morphological stability of interconnects :
(a) The interface stability of a thin metal layer sandwiched between two conductive half-planes under the influence of applied electric field is studied. The conditions of instability (hillock formation) of the perturbed interface is analyzed as a function of atomic mobilities and effective charge of the two constituents. The shape and the growth rate of hillock is also found to be dependent on the magnitude of the applied electric field.
(b) The phenomenon of grain boundary grooving by surface diffusion under the combined effect of capillarity and electromigration is simulated. The evolution of the groove depth and the associated mechanisms are elucidated at various strengths of applied electric field.
||Planned: A print-only volume