|About this Abstract
||2018 TMS Annual Meeting & Exhibition
||Coupling Experiments and Modeling to Understand Plasticity and Failure
||E-8: Influence of the Aluminum Microstructure in Electronic Components on their Failure Behavior: Experiments and Crystal Plasticity Simulations
||Ewald Werner, Felix Meier
|On-Site Speaker (Planned)
Growing demands on performance and durability of integrated circuits require an understanding of possible failure mechanisms like crack initiation within the interlayer dielectric and surface roughening of the metallization plate. Throughout their life, the electronic components undergo millions of load cycles, so that an experimental life cycle analysis during the development process may not be feasible. This work investigates the influence of the Al-microstructure on typical failure mechanisms utilizing a crystal plasticity material model taking into account the microstructure, the grain orientation, the grain size and the temperature dependency. Experimental observations were confirmed and new insights into the influence of the microstructure were gained. The roughening of the metallization plate is maximal in the region of high temperature fluctuation and grows continuously with increasing number of cycles. In agreement with experimental results it was shown that a grain refinement in the conductor paths contributes to a longer life time.
||Planned: Supplemental Proceedings volume