|About this Abstract
||Materials Science & Technology 2019
||Late News Poster Session
||P1-65: Exploration of Thin Films as a Potential Material for Ceramic Low-dielectric Applications
||Eric Ngo, Mat Ivill, Samuel Hirsh, Daniel Shreiber, Clifford Hubbard, Govind Mallick, John Carroll
|On-Site Speaker (Planned)
Boron carbide nitride (BCN) thin film is explored for its structural and electrical properties as an alternative to, and potential replacement for, silicon dioxide as inter-layer dielectric (ILD) materials. Physical vapor deposition (PVD) of BCN films were prepared by RF sputtering from a stoichiometric boron carbide target and deposited on blank and metallized electrode sapphire to create parallel capacitance structures. Two different gas mixture ratios of argon:nitrogen (Ar:N2) were used for deposition. The electrical characterization of BCN is completed, including dielectric constant, current versus voltage curves, and dielectric breakdown voltage characteristics extracted from the semiconductor system. The BCN 80:20 achieved dielectric constant of 3.7 at 1.0 MHz, a resistivity of 1.33 × 108 ohm-cm while the dielectric breakdown voltage exceeded 25 MV/m. In addition, reactive gas dry etch processing will be discussed showing that BCN as a potential materials for low-dielectric ceramic applications.