|About this Abstract
||Materials Science & Technology 2011
||Interfaces, Grain Boundaries and Surfaces from Atomistic and Macroscopic Approaches -- Fundamental and Engineering Issues
||Silver Layer Instability in a SnO2/Silver/SnO2 Trilayer on Silicon
||Carol Handwerker, Suk Jun Kim, Eric Stach
|On-Site Speaker (Planned)
Trilayers of SnO<SUB>2</SUB>/Ag/SnO<SUB>2</SUB> on Si formed at room temperature become unstable after annealing at 100°C and 200 °C, exhibiting five phenomena – formation of internal Ag hillocks, cracking of the top SnO<SUB>2</SUB> layer above internal Ag hillocks, penetration of Ag-Ag grain boundaries by SnO<SUB>2</SUB> leading to grain pinch-off, formation of Ag rods and islands on the free surface of the SnO<SUB>2</SUB> through the cracked top layer, and void formation in the Ag layer. The possible driving forces for the observed phenomena resulting from thermal expansion mismatch stresses and the reduction in interfacial energy will be discussed.
||Definite: A CD-only volume