|About this Abstract
||2017 TMS Annual Meeting & Exhibition
||GAT-2017 (Gamma Alloys Technology - 2017)
||Solidification of TiAl Alloys with Low Contents of Si
||Antoine Paris, Mikael Perrut, Dominique Daloz, Anne Denquin
|On-Site Speaker (Planned)
Small additions of silicon in cast TiAl alloys are known to improve significantly their creep resistance at high temperature. However, silicon can undergo segregation during solidification, which may lead to TiAl+Ti5Si3 eutectic structures. As-cast microstructures of Si-doped TiAl alloys will be presented, focusing on the microsegregation in a Ti-47Al-2Zr-0.3Si (at%) alloy. SEM-EDS maps of as-cast microstructures have been acquired and quantitatively studied, obtaining a large amount of chemical data. Hence, the chemical segregations of each element and their cross-correlations have been measured. These results are compared to Scheil-Gulliver calculations. The relevance and precision of the method are finally discussed.
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