|About this Abstract
||2017 TMS Annual Meeting & Exhibition
||Emerging Interconnect and Pb-free Materials for Advanced Packaging Technology
||DZ* Value of the Sn Diffuser in Cu6Sn5 under Various Current Densities
||Cheng-Hsien Yang, Pei-Tzu Lee, Han-Lin Chung, Cheng-En Ho
|On-Site Speaker (Planned)
The DZ* value of Sn in the Cu6Sn5 phase under various current densities (j = 0–104 A/cm2) at 150 °C was acquired via Cu/Sn/Ni diffusion couples. During current stressing, an electric current was imposed from the Ni side to the Cu side of the couples, and the reaction kinetics of the Cu6Sn5 phase at the Cu/Sn interface was analyzed, to characterize the Sn electromigration behavior in growth of Cu6Sn5. A linear increase of the Cu6Sn5 (or Sn) quantity was obtained with increasing j, resulting in a unique growth mode of Cu6Sn5 in the Cu/Sn reaction. A calculation based on the fundamental electromigration theory in combination with experimental measurements indicated that the DZ* value of Sn in Cu6Sn5 fell within the range of 2×10-14 m2/s – 5×10-14 m2/s for j = 0–104 A/cm2.
||Planned: Supplemental Proceedings volume