|About this Abstract
||Materials Science & Technology 2012
||In-situ Characterization of Phase Transformations in Materials
||Study of Temperature Distribution and Selenide Binaries during Fabricating CuInSe2 Thin Films by Selenizaiton Metallic Precursor
||Li Xinyi, Liu Weifeng, Zhu Changfei
|On-Site Speaker (Planned)
The selenization temperature distribution during fabricating CuInSe2 thin films by post-sputtering selenization with quasi-closed container was obtained through simulation. Results of experiments with containers made from quartz and graphite were nearly identical to the simulated distribution, giving basic understandings of temperature distribution during the selenization processes and possible temperature-related thin film morphologies. CIS thin films were fabricated and inhomogeneous morphologies whose outlines agreed to the contours of the distribution map were obtained. The fabricated thin films were characterized by XRD, SEM, EDS and Raman scattering. In-Se binaries in the In-rich CIS thin film were studied carefully, revealing the temperature-related transformation between indium selenides and CIS with Cu-Se binaries. The phenomenon indium enrichment on the surface of the Cu-rich thin film was noticed and explained by the cause of differences in diffusion coefficients of alloys and precursor deposition process.