| About this Abstract |
| Meeting |
2011 Electronic Materials Conference
|
| Symposium
|
2011 Electronic Materials Conference
|
| Presentation Title |
J4, ZnO Nanowire-Based Field Effect Transistors with Non-Volatile Memory Function Using Mobile Protons |
| Author(s) |
Jongwon Yoon, Woong-Ki Hong, Minseok Jo, Gunho Jo, Minhyeok Choe, Woojin Park, Jung Inn Sohn, Hyunsang Hwang, Mark Welland, Takhee Lee |
| On-Site Speaker (Planned) |
Jongwon Yoon |
| Abstract Scope |
One-dimensional semiconducting nanowires have attracted significant attention due to their unique properties including highly anisotropic geometry and large surface-to-volume ratio. In particular, the interface of nanowires with large surface-to-volume ratio plays an important role for modification of fundamental electronic properties in nanowire-based field effect transistor (FET) devices. For example, the threshold voltage can be tuned through surface roughness control of ZnO nanowire with various growth substrates and memory function can be created by interface control using self-assembled molecules and ferroelectric dielectric films. In this study, we demonstrated the ZnO nanowire-based transistor memory device by introducing mobile protons, which are generated by hydrogen annealing process under high pressure and at relatively low temperature (400 ºC, 10 atm), in the SiO2 film. We observed that reversible hysteresis behavior in transfer characteristics (drain current versus gate voltage) and reproducible ON/OFF switching behavior. These memory characteristics are attributed to manipulation of interface properties, such as effective electric field, surface charge density, and surface barrier potential, through movement of protons with gate electric field, which is consistent with the UV photo-response characteristics of our nanowire memory devices. |
| Proceedings Inclusion? |
Undecided |