|About this Abstract
||2018 TMS Annual Meeting & Exhibition
||2018 Symposium on Functional Nanomaterials: Discovery and Integration of Nanomaterials
||Fully CMOS-Compatible Synthesis and Photodetector-integration of Ultrathin, Parallel-aligned ZnO Nanowire Arrays by Infiltration Synthesis
||Chang-Yong Nam, Aaron Stein
|On-Site Speaker (Planned)
Synthesis and device integration of nanowires by CMOS (complementary metal-oxide-semiconductor)-compatible processes are highly desired for various technological applications. Here we report fully CMOS-compatible synthesis and ultraviolet photodetector integration of ultrathin (~30 nm), parallel-aligned, polycrystalline ZnO nanowire arrays by infiltrating diethylzinc and water vapors into lithographically lithographically patterned SU-8 polymer templates. The ZnO nanowire array photodetectors featured ultralow femtoampere dark currents invariant with the number of nanowires, photocurrent on-off ratios over 10<SUP>6</SUP>, and unusual super-linear photoconductivity causing increases in photodetector performances under higher incident light powers. The temperature-dependent transport property measurement revealed a unique photoelectrochemical thermionic emission mechanism that controls the grain boundary barrier height via the reaction of chemisorbed oxygen with photo-generated carriers. The demonstrated synthesis and fabrication methods have potentials for CMOS-integration of nanowire sensor devices and circuitries. The discovered transport mechanism provides guidelines for utilizing polycrystalline metal oxide nanostructures for sensor applications.
||Planned: Supplemental Proceedings volume