|About this Abstract
||2018 TMS Annual Meeting & Exhibition
||Advanced Characterization Techniques for Quantifying and Modeling Deformation
||Electron Microscopy Image Simulation Using Atomistic Simulation Data
||Joseph Tessmer, Saransh Singh, Marc De Graef
|On-Site Speaker (Planned)
Electron microscopy, in both scanning (SEM) and transmission (TEM) modes, is an important characterization method for understanding material properties, such as defect generation and deformation mechanisms. Dynamical diffraction simulations can provide simulated SEM and TEM images, which can be correlated with experimental images to help identify defect types, crystalline orientation, and other material characteristics. To date, dynamical diffraction has been established mostly for materials and defects with displacement fields described by analytical expressions. Using atomistic simulations for material systems under loading, the presence of lattice defects must be extracted from atom coordinates. Using such coordinates as input for dynamical diffraction simulations, electron micrographs can be generated for arbitrary defect configurations. These images can then be used for comparison with experimental images, as well as to confirm the validity of the atomistic simulation for modeling material properties and behavior.
||Planned: Supplemental Proceedings volume