Author(s) |
Caroline Bonafos, Jean-Marie Poumirol, Meiling Zhang, Nicolas Chery, Clément Majorel, Arnaud Arbouet, Hervé Rinnert, Etienne Talbot, Peter R Wiecha, Rémi Demoulin, Fuccio Cristiano, G Larrieu, S Kerdiles, P. Acosta-Alba, A Royet, Fabrice Gourbilleau, Vincent Paillard |
Abstract Scope |
For a long time, plasmonic-based technology relied on noble metal nanostructures due to their high Localised Surface Plasmon Resonance (LSPR) in the visible range. Recently, it has been discovered that doped semiconductors support LSPR in the midinfrared, even for small objects. The number of dopants becomes a new parameter to adjust the position of the resonance. Among the other semiconductors, silicon is of particular interest due its mastered doping with carrier concentrations up to a few 1020 cm-3 at the bulk state.
In this keynote, two recent works concerning the successful doping of Si nanostructures leading to tunable LSPR in the MIR-NIR range will be presented. They concern (i) highly doped Si metasurfaces obtained by a top down approach showing coupling effects and (ii) massively doped small Si nanocrystals (NCs) embedded in silica with LSPR supported with as few as ten active electrons per NC. |