|About this Abstract
||2016 TMS Annual Meeting & Exhibition
||Emerging Interconnect and Pb-free Materials for Advanced Packaging Technology
||Die-attach Structure Using SiC Particle Added Ag Paste for Ultra High Thermal Stability Usage
||Hao Zhang, Shijo Nagao, Tohru Sugahara, Emi Yokoi, Katsuaki Suganuma
|On-Site Speaker (Planned)
To improve the high-temperature reliability of sintered Ag joints, silicon carbide particle (SiCp) were added to Ag micron-flake paste. Quality sintered joints between copper to copper and silicon to direct bonded copper (DBC) substrate were obtained at 250°C. High-temperature stability was investigated by means of aging tests at various temperatures, and of thermal heat-shock cycling. Grain coarsening of porous Ag microstructure was remarkably inhibited even at higher temperatures than that of sinter bonding; Mean Ag grain size in the SiCp-distributed joints was unchanged whereas that in pure Ag ones increased from 1.1 to 2.5 μm. The surface metallization of the DBC was relevant to assure thermal stability at ultra-high temperatures exceeding 300°C. Ti diffusion barrier layer was adopted under the Ag metallization to prevent the surface oxidation of DBC at the high temperature. Our results propose a stable die-attach structure durable at ultra-high working temperature for wide-band gap power devices.
||Planned: A print-only volume