|About this Abstract
||2018 TMS Annual Meeting & Exhibition
||Deriving Value from Challenging Waste Streams: Recycling and Sustainability Joint Session
||Recovery of Gallium and Arsenic from Gallium Arsenide Semiconductor Scraps
||Dachun Liu, Guozheng Zha, Liang Hu, Wenlong Jiang
|On-Site Speaker (Planned)
In this paper, It’s presented that a novel technique for recovery of gallium and arsenic by thermal decomposition under vacuum. The effects of distillation temperature and distillation temperature on the volatilization behavior of each component were investigated, theoretical calculations and experimental studies have proved that the method is feasible. The results show that under the optimum condition, highly pure Ga can be extracted with advantages over conventional techniques, including simple operation and environmental friendliness. For example, the metallic gallium obtained is good and the content of which is larger than 99.99% at 1273K for 3h when the system pressure is 3~8 Pa. And arsenic obtained was existed in the form of simple substance which was little damage.