A1, Nitride Film Growth by Migration Enhanced Afterglow (MEAglow)

A2, Observation and Elimination of Indium Surface Segregation

A3, Depth Resolved Strain and Composition Studies on InGaN and AlInN Films Grown by Plasma-Assisted Molecular Beam Epitaxy

A4, Low Temperature p-GaN Grown by NH3-MBE

A5, Epitaxial Lateral Overgrowth of Aluminum Nitride by Molecular Beam Epitaxy

A6, Effect of Superlattices and Surfactants on AlN Homoepitaxy by MBE

AA1, Self-Assembled, Tensile-Strained III-V Islands on (110) and (111)A Substrates

AA2, Atomic Structure of InAs/InGaAsP/InP(001) Quantum Dashes and Decomposition of the InGaAsP Matrix Material

AA3, Photoluminescence and Thermal Carrier Activation in Type-II ZnTe/ZnSe Quantum Dots

AA4, Temperature Dependent Photoluminescence of Ensemble and Single InAs/InGaAlAs Quantum Dots

AA5, Atomic Structure and Optical Properties of Submonolayer InAs/GaAs Depositions

B1, Phonon Engineering through Crystal Chemistry

B2, Ca3AlSb3 and Ca5Al2Sb6; Inexpensive, Non-Toxic Thermoelectric Materials for Waste Heat Recovery

B3, The Impact of Nano-Inclusions Introduced by Mechanical Alloying on Thermoelectric Transport in Pb1-xSnxTe: Experimental Results and Theoretical Predictions

B4, Reevaluation of PbTe1-xIx as High Performance n-Type Thermoelectric Material

B5, The Universal Optimal Seebeck Coefficient for Maximum Power Factor

BB1, Local Density of States and Semimetallic Behavior of Rare Earth-V Nanoparticles Embedded in a III-V Semiconductor Matrix

BB2, A Simple Thermodynamic Model for the Doping and Alloying of Nanoparticles

BB3, Band Structure and Thermal Escape Processes of Strained InGaSb/AlGaSb Quantum Wells

BB4, Formation and Templating of III-V Semiconductor Nanospikes by Focused Ion Beams

BB5, Structural and Optical Characterization of Growth Pause Induced Ripening of InAs/GaAs Quantum Dot Heterostructures.

C1, Scanning Gate Spectroscopy: A New SPM Technique for Nano-Devices on Oxide Surfaces

C2, Measurement of Nanoscale External Quantum Efficiency of Plastic Solar Cells by Photoconductive Atomic Force Microscopy

C3, Role of Ethylene on Thermal and Chemical Stability of TiO2(110)

C4, Combined XSTM and High Resolution XRD Study for Quantitative Structural Descriptions of Type-II Superlattice IR Detectors

C5, In Situ Transmission Electron Microscopy and Photoluminescence Study of Ge-Core/SiGe-Shell Nanowires

C6, Local Strain Characterization of MEMS-Based Silicon Beams by Raman Spectroscopy

CC1, In Situ High-Temperature Scanning Tunneling Microscopy Studies of Graphene Growth on 6H-SiC(0001)

CC2, Electrical Characterization of Graphene-Semiconductor Heterojunctions

CC3, Correlated Conductivity and Work Function in Epitaxial Graphene

CC4, Response of Graphene-Based Field Effect Devices Exposed to Gamma and Neutron Irradiation

CC5, Surface Adsorption and Charge Transport in Epitaxial Graphene on 6H-SiC

CC6, Graphene Reinforced Composites as Efficient Thermal Interface Materials

CC7, Frequency Domain THz Characterization of Graphene

CC8, Charge Carrier Dynamics in Graphene: Suspended vs. Supported

CC9, Polariton Enhanced IR-Reflectivity of Epitaxial Graphene on SiC

D1, Tuning of Plasmonic Cavity Resonances Using Atomic Layer Deposition

D2, Tunable Infrared Absorption of Nano Plasmonic Structures

D3, In Situ Spectroscopic Ellipsometric Analysis of Thin Silver Films Deposited Using DC Magnetron Sputtering and HiPIMS Techniques

D4, Second Harmonic Generation in a Metamaterial Resonating at Fundamental and Second Harmonic Frequencies

D5, Optical Dispersion of Amorphous Germanium Thin Films as a Function of Thickness and Deposition Parameters

D6, LATE NEWS: Optical Properties of FIB-Fabricated Metallic Nanostructure Arrays on Compound Semiconductor Surfaces

DD10, Characterization of L21-Ordered Full-Heusler Co2FeSi1-xAlx Alloy Thin Films Formed by Silicidation Technique Employing Silicon-on-Insulator Substrate

DD1, Enhanced Spin Injection and Spin Lifetimes in Graphene

DD2, Enhancement of Spin Torque by Proximity to Other Domain Walls

DD3, Spin Seebeck Effect in MnAs/GaMnAs Bilayers

DD4, Universal Valence-Band Picture of the Ferromagnetic Semiconductor GaMnAs Obtained by the Resonant Tunneling Spectroscopy

DD5, Fe3O4/GaAs Hybrid Ferromagnet/Semiconductor Nanostructures

DD6, Magnetic Depth Profile of Mn-Graded (Ga,Mn)As

DD7, Manganese-Doping of Group IV Semiconductor Surfaces and Nanostructures

DD9, Formation of Half-Metallic Ferromagnet Tunnel Junctions of Co2FeSi/SiOxNy/Si Using Radical Oxynitridation Technique

E1, Quantum Dot Red/Green/Blue/White Light-Emitting Electroluminescent Devices with a Low Turn-on Voltage and High Brightness

E2, Fabrication of Flexible Single-Crystal Devices on Electrically-Conductive Substrates

E3, A Compensation Mechanism for Flexible and Electrically Stable Solution-Processed Organic Field-Effect Transistors

E4, Ambipolar Charge Carrier Transport in Organic Thin Films

E5, Application of Vapor Forms 1-Octanethiol Coated Copper Conductive Ink for Ink-Jet Printing

E6, LATE NEWS: Impact of Mechanical Stress on Stability of Flexible Amorphous Silicon Thin Film Transistors

EE1, Quantitative Analysis of Lattice Disorder and Crystallite Size in Organic Semiconductor Thin Films, and Implications for Charge Transport

EE2, Following Charge-Trapping Chemical Reactions in Pentacene Films by Selective Chemical Doping and Wavelength-Resolved Electric Force Microscopy

EE3, Molecular Contact Doping for Organic n-Channel TFTs and Fast Complementary Circuits

EE4, Charge Trapping and Localization Due to Paracrystalline Disorder in High Performance Polymeric Semiconductors

EE5, Probing the Microstructure of Buried Polymer-Polymer Interfaces with Thin Film Transistors

EE6, LATE NEWS: Formation of Kirkendall Voids and its Role in the Performance of Contact to P-Type Silicon Nanowires

EE7, Materials Requirements for Low-Voltage Flexible Organic Transistors and Circuits

EE8, Organic Transistor-Based Memory

EE9, From Nano- to Micro-Scale Control of Crystalline Order in Soluble Small-Molecule Organic Semiconductors

F1, Design and Growth of InAs Quantum Dash Based MWIR VECSELs

F2, Influence of Surface Patterning on Droplet Epitaxy and Photovoltaic Properties of InAs/GaAs Quatum Dots

F4, Visible Light Emitting Diodes Based on Self-Assembled In0.5Ga0.5As Quantum Dots on GaP

F5, Large Area Growth of GaAs Solar Cell Based on Nanowire Structure

F6, Output Polarization Dependence of Asymmetric Current Injection VCSELs on Crystalline Direction and Ion Implantation

FF1, n+GaAs Sheet Resistance Saturation and Implications to BiHEMT Growth

FF2, Metamorphic p-i-n InGaAs Photodetectors Grown by MOCVD

FF3, Optimized Growth Condition and Dot Geometry in InAs/InGaAs Sub-Monolayer Quantum Dot Infrared Photodetector

FF4, Epitaxial Growth of InGaAs/InAlAs/InP Quantum Cascade Lasers by Metalorganic Chemical Vapor Deposition

FF5, GaInNAsSb Quantum Wells with Strain-Compensating GaAsP Layers for GaAs-Based 1.55 μm Lasers

G1, Molecular Beam Epitaxial Growth of Zn3P2/GaAs and ZnS/GaAs Heterostructures for Photovoltaics

G2, ZnSnN2: A New Earth-Abundant Semiconductor for Solar Energy Conversion

G3, Electrodeposition of Indium Sulfide Films from Organic Electrolytes

G4, Spatially Resolved Responses of Nanoscale Photovoltaic Model Devices

G5, Challenges of Hall Measurements on Low Mobility Materials and How to Overcome Them

GG1, Highly Polarized Spontaneous Emission from Semipolar (20-2-1) InGaN/GaN Light-Emitting Diodes

GG2, Characterization of Green Semipolar (20-21) GaInN/GaN Multiple Quantum Well Light-Emitting Diodes Grown on Freestanding GaN Substrate

GG3, Optical Emission Patterns in Semipolar (11-22) GaN Light Emitting Diodes on Planar m-Plane and Etched r-Plane Sapphire

GG4, Microscopic Optical Properties of Semi-/Nonpolar GaN with InGaN SQWs on Top Grown Directly on Patterned Si Substrate

GG5, Strain Relaxation in Semipolar Nitrides for Optoelectronic Device Applications

H10, Growth and Characterization of npn-GaN/InGaN/GaN Double-Heterojunction Bipolar Transistors on a Free-Standing GaN Substrate

H1, Quantization and Bias Effects on Gate Capacitance of Scaled GaN HFETs

H2, Direct Correlation between Access Region Trap Generation and Field-Induced Degradation in AlGaN/GaN High Electron Mobility Transistors

H3, Temperature Dependent Off-State Degradation of AlGaN/GaN HEMTs

H4, Noise Measurements of Nanowire FET Sensors for Sensitivity Determination

H5, Piezoresistive Microcantilever with Embedded AlGaN/GaN HFET for Sensing Applications

H6, N-Polar GaN HEMTs Grown by MBE and MOCVD with fmax of 255 and 250 GHz, Respectively

H7, Flattened Transconductance (gm) in a Highly Scaled AlGaN/GaN HEMT Using a Polarization-Induced 2D/3D Hybridized Channel Design

H8, Fabrication of AlGaInN/GaN Transistors with ft and fmax Exceeding 100 GHz

H9, Effects of Threading Dislocation Density on the Gate Leakage of AlGaN/GaN Heterostructures for High Electron Mobility Transistors

HH10, Strain: A New Strategy of Tuning Doping Site and Type in Semiconductors

HH1, Surface Donors Dominate the Conductivity of In2O3 Thin Films

HH2, The Role of Native Point Defects in Highly n-Type Degenerate (Zn,Ga)O Films

HH3, High Resolution Photoluminescence Spectroscopy of Donors in Undoped and Indium-Doped ZnO Grown by Metalorganic Vapor Phase Epitaxy

HH4, Trap-Limited Li Diffusion in Melt Grown ZnO

HH5, Identification of Acceptor States in Li Doped ZnO Using Nanoscale Depth-Resolved Cathodoluminescence Spectroscopy

HH6, Zn(Mg,Cd)O Epitaxy for Optoelectronic Applications

HH7, ZnO and Al2O3 Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition and Plasma Enhanced Chemical Vapor Deposition

HH8, Thin Films of ZnO Prepared by Reactive Pulsed Arc Molecular Beam Deposition

HH9, Atom Probe Tomography of ZnO Nanowires

I10, Highly Ordered Vertical Silicon Nanowire Arrays Embedded in Polymer for Thin-Film Thermoelectric Devices

I1, A Tubular Thermoelectric Generator with Piled Conical Rings Structure

I3, Thermoelectric Properties of ErSb:InxGa1-xSb Thin Films Grown by MBE

I4, Nanoparticle Size Dependence of the Electrical, Thermal, and Optical Properties of Er-Doped In0.53Ga0.47As

I5, Improving Thermoelectric Power Generation Efficiency with Epitaxial TbAs/III-V Nanocomposites

I6, The MOCVD Growth of Erbium Antimonide Nanocomposite Embedded III-V Host Materials and Characterization for Thermoelectrics

I7, Cross-Plane Transport Properties of p-Type La0.67Sr0.33MnO3/LaMnO3 Perovskite Oxide Metal/Semiconductor Superlattices

I8,Temperature-Dependent Thermal Properties of HgCdTe Superlattices

I9, Development of III-Nitride Materials for Thermoelectric Applications

II10, Vertical Transport in GaN/AlGaN Resonant Tunneling Diodes and Superlattices

II1, Absence of Electron Accumulation at InN(11-20) Cleavage Surfaces

II2, MBE Growth Study of AlInN and AlInN/GaN Heterostructures for Intersubband Device Applications

II3, Room Temperature near-Infrared AlInN/GaN and AlGaN/GaN Quantum Well Photodetectors Grown by Molecular Beam Epitaxy

II4, Characterization of Lateral and Vertical Inhomogeneities in InAlN Grown by Plasma-Assisted Molecular Beam Epitaxy

II5, Electrical Tuning of InGaN Quantum Dots in GaN Photonic Crystal Cavities

II6, Investigation of Indium and Impurity Incorporation of InGaN Films on Polar, Nonpolar, and Semipolar GaN Orientations Grown by Ammonia MBE

II7, Piezoresponse Force Microscopy of InGaN/GaN Quantum Dots

II8, InGaN/GaN Core-Shell Nanorod Arrays Grown by Selective Area Growth for InGaN-Based Light Emitting Diodes

II9, Molecular Beam Epitaxial Growth and Characterization of InN Nanocolumns on GaN Templates

J10, Role of Defect States in Charge Transport in Semiconductor Nanowires

J1, Molecular Surface Passivation Effects on Indium Oxide Nanowire Transistors

J2, Electrically Pumped ZnO Nanowire p-n Junction Laser

J3, Electrical Transport Study of Schottky Barrier Based ZnO NanoWire FETs

J4, ZnO Nanowire-Based Field Effect Transistors with Non-Volatile Memory Function Using Mobile Protons

J5, Raman and Electrical Probes of Carrier Concentration in Si-Doped GaN Nanowires Grown by Plasma-Assisted MBE

J6, Electrodeposited InSb Nanowires: Structural Properties and Transistor Performance

J7, Electron Transport in One-Dimensional InAs Nanowire Transistors

J8, Electrical Properties of Axial and Radial Nanowire pn-Junctions – A Comparison

J9, GaAs Core-Shell Nanowire-Based Vertical p-n Diodes

JJ1, Growth Investigations of Lattice-Matched III/V Compound Materials on (001) Si Substrate for Optoelectronics

JJ2, Coalescence Phenomena in Narrow-Angle Stripe Epitaxial Lateral Overgrown InP by MOCVD

JJ3, Growth Habit Control of Epitaxial Lateral Overgrown InP on Si Substrates by MOCVD

JJ4, Integration of InAs/GaAs Nano/Micro Structures with Silicon by Selective Area Epitaxy

JJ5, The Electrical Nature of Structural Defects in InSb Synthesized by Molecular Beam Epitaxy on Si (100) and GaAs (100)

JJ6, Low Leakage Current AlGaN/GaN HEMTs on Si Substrates with Partially Mg-Doped GaN Buffer Layer by MOCVD

JJ7, Effect of Growth Temperature on Composition of InAlN Alloy Grown by GSMBE on Si (111)

JJ8, Vapor Phase Epitaxial Growth of (211)B CdTe on Nanopatterned Si for HgCdTe Based Infrared Device Applications

K1, The Evolution of the SiC Power MOSFET from Lab Demonstration to Commercial Product

K2, A Bondable Metallization Stack that Prevents Diffusion of Oxygen and Gold into Monolithically Integrated Circuits Operating above 500 °C

K3, High-Low Temperature Performance of 20 A, 1200 - 1700 V 4H-SiC Power MOSFETs

K4, Improved Microstructure and Ohmic Contact of Nb Electrode on N-Type 4H-SiC

K5, Slow Thermal Emission from Traps in 4H-SiC Epilayers

K6, Deflection of Threading Dislocations with Burgers Vector c/c+a Observed in 4H-SiC Substrates and Axial Slices with Associated Stacking Faults

K7, Stacking Faults Originating from BPDs in High-Doped Buffer Layers

K8, Step Controlled Epitaxy on 4° and 1° Off-Cut 4H and 6H-SiC Substrate Using Dichlorosilane

K9, Defect Structures of B12As2 Single Crystalline Epitaxial Layers on Off-Axis (0001) 4H-SiC Substrates

KK10, Environmental Stabilization and Functionalization of ZnO Nanobridge Sensors Fabricated Using Carbonized Photoresist

KK1, Size Effects in Ni Catalyzed Germanium Nanowire Growth

KK2, Effects of Annealing on Sub-Eutectic Heteroepitaxial Growth of Germanium Nanowire on Si (111) Substrate

KK3, Catalyzed Vapor-Liquid-Solid Oxidation: Germanium Oxide Nanowires

KK4, Catalyst Proximity Effects on the Synthesis of Si Nanowires for In Situ Scanning Electron Microscope Li Intercalation Experiments

KK5, A-Si / Si Nanowire Hybrid Photovoltaics

KK6, Internal Quantum Efficiency in Nanorod LED Arrays Created by Top-Down Techniques

KK7, Electrochemically Deposited Branched Indium Antimonide (InSb) Nanowire Arrays as “In-Situ” Anti-Reflective Structures

KK8, Aligned Assembly of Nanowire Arrays with Intrinsic Control

KK9, Nanostructure Decorated AlGaN/GaN HEMTs for Chemical Sensing

L1, Single-Layer MoS2 Transistors

L2, Role of Optical Phonon in Graphene Nanoribbon Tunnel Transistors: Strategy for Abrupt Switching from Material's Point of View

L3, Fabrication of Top-Gated Sub-10 nm Epitaxial Graphene Nanoribbon FETs Using Hydrogen Silsesquioxane(HSQ)

L4, Semiconducting Graphene: Prospects and Challenges

L5, Influence of Trapped Single Charges in Single Walled Carbon Nanotube Transistor with SiNx /Al2O3 Double Wrapped Layers

L6, Deposition and Characterization of AlN Dielectric Films on Graphene

L7, Graphene as a Heat-Spreading Layer in Blue LEDs

L8, RCA Clean Assisted Transfer of CVD Grown Graphene

L9, LATE NEWS: Electrical and Materials Reliability Issues in Single-Walled Carbon Nanotube Interconnect Devices

LL10, 3C-Silicon Carbide Epitaxy by Means of Silicon Carbide-on-Silicon Wafer Bonding

LL1, Electrochemical Etched InP Porous Layer Formation for Layer Transfer

LL2, Ion-cut Transfer of InP-Based High Electron Mobility Transistors Using Adhesive Bonding

LL3, Investigation of PECVD Silicon Nitride Deposition on Porous Si

LL4, Double Layer Transfer Made by the Smart Cut™ Technology and Embedded Porous Silicon Layer

LL5, LiNbO3 Thin Single Crystal Layer Transfer by Smart Cut™ Technology

LL6, InGaAs-InGaN Wafer-Bonded Current Aperture Vertical Transistors

LL7, Electrical Conductivity of Directly Bonded Silicon/Germanium Hetero-Structures

LL8, Interface Barrier Height Reduction in Wafer Bonded n-GaAs / n-GaAs by Sulfur Passivation Methods

LL9, Comprehensive Investigation of Ge-Si Bonded Interfaces Using Surface Activation

M10, Effects of Dislocations on Luminescence in m-Plane InGaN Quantum Wells

M1, A Defect-Based Mechanism for Efficiency Droop in Nitride Light Emitting Diodes

M2, Impact of Extended and Point Defects on InGaN LED Efficiency

M3, Effect of InxAl1-xN Electron Blocking Layer on Quantum Efficiency in Visible Light-Emitting Diodes Grown by Metalorganic Chemical Vapor Deposition

M4, Semipolar AlGaN Buffers for Deep Ultraviolet Diode Lasers

M5, Low Dislocation Density Al0.32Ga0.68N by Overgrowth of Patterned Templates

M6, Enhancement of Hole Transport and Carrier Distribution in InGaN/GaN Multiple Quantum Wells by Controlling Indium Content of p-Type Layer in Visible Light-Emitting Diodes

M7, P-Side-Down, Ga-Polar, Green-Emitting Single Heterostructure LEDs

M8, Characterization of Green Semi-Polar (10-11) GaInN/GaN Light Emitting Diodes

M9, Optical Properties of Molecular Beam Epitaxy Grown High in Content (~20%) InGaN film Emitting in Green (540 nm)

MM10, Resistance and Transparency Study of Contacts to p-Type GaN

MM1, Surface Preparation of GaP for Regrowth on Epitaxially-Inverted Structures on Silicon

MM2, Oxide Surface Passivation of Ge for Optoelectronic Applications

MM3, Oxygen-Enhanced Wet Thermal Oxidation of In0.53Ga0.47As

MM4, Wet Etching Technique for Fabrication of GaSb Based Mid Infrared Single Lateral Mode Lasers

MM5, Fabrication of GaAs Micromechanical Resonator Arrays for Single Molecule Detection

MM6, Hydrogenated Amorphous Silicon-Carbon Alloy Thin Films for Uncooled Microbolometers

MM7, Metal and Semiconductor Contacts (Si, V, Au) to Organic Molecules: The Fullerene Model System

MM8, Silicide/Silicon/Silicide nanowire Heterostructures with FET devices

MM9, Improved Electrical Properties of N-Contacts to N-face GaN for Vertical Light-Emitting Diodes by Laser-Annealing

N1, Preparation of the Red Phosphor Nanoparticle Films for the Application to Silicon Solar Cells

N2, GaAs Nanopillar Photovoltaics Based on Catalyst-Free Patterned Growth

N3, Wafer Bonded GaAs-Sapphire for Photovoltaic Applications via Adhesive Bonding

N4, Thin Film III-V Photovoltaics on Flexible Metal Substrates and Defect Mitigation Strategies

N5, LATE NEWS: Low Atomic Weight Transition Metal Doping of Co-Phased TiO2

N6, Towards >15% Solar Cells on Metal Foils: Heteroepitaxial Crystal Silicon on Alumina

N7, High External Quantum Efficiency and Fill-Factor InGaN-Based Solar Cells Grown by NH3-MBE

N8, Design Principles for Light-Trapping in Thin Silicon Films with Embedded Dielectric Nanoparticles

N9, Single Crystalline Si Substrate Growth by Lateral Diffusion LPE Technology for PV Applications

New Concepts and Materials for Solar Power Conversion

NN10, Investigation on Activated Charcoal-Carbon Fabrics Composite Electrode Materials for Supercapacitor Application

NN1, Au-Molecule-GaAs Devices with Graphene Barrier Layer

NN2, Gap Mode Plasmonic Cavity with Coupled Organic Gain Medium

NN3, Conductance Statistics of Molecular Junctions Fabricated with a Large Array of Sub-10 nm Single-Grain Au Nanodots Electrodes

NN4, Surface Functionalization of Si Nanowires on SOI Substrates for Biosensing Applications

NN5, Switching Characteristics of Nonvolatile Organic Resistive Memory Devices with Interfacial Oxide Layers Tuned by O2 Plasma Treatment

NN6, Synthesis and Lithium Battery Applications of Nitrogen Doped Graphene Films

NN7, Conformal Coating of Thin Polymer Electrolyte Layer on Nanostructured Electrode Materials for 3D Battery Applications

NN8, Nanostructured Co3O4 Supercapacitors via Solution Precursor Plasma Spray

NN9, Performance of MnO2 Crystallographic Phases in Rechargeable Lithium-Air Oxygen Cathode

O10, Characterization of Ultraviolet LEDs by Electrical Analysis and Laser-Based Failure Analysis Techniques

O1, Fabrication of UV Emitting Devices Using Vertical ZnO Nanorod Arrays on the p-GaN Films

O2, Low-Threshold ZnO Random Laser Diode Realized by Double Heterojunction Structure

O3, ZnMgO-Based Photodetectors for Short Wavelength and Light Polarization Detection

O4, Fabrication and Characterization of 265 nm Light Emitting Diodes on AlN Single Crystal Substrates

O5, Time-Resolved Photoluminescence of AlInN/AlN Multiple Quantum Well Active Regions for Mid-UV Emitters

O6, Enhanced Inter-Band Tunneling by Polarization Engineering in InGaN/GaN Quantum Wells

O7, Effects of Polarization Interface Charge on GaN/SiC Separate Absorption and Multiplication Avalanche Photodiodes

O8, Low-Temperature Growth and Characterization of p-GaN and Graded p-InGaN Layers by MOCVD for Photovoltaic Applications

O9, Carrier Lifetimes and Recombination Phenomena in InGaN/ GaN Quantum Dot and Quantum Well LEDs: A Comparative Study

P1, Memristance and Current-Driven Phase Transition in Multifunctional Binary Oxide Nanodevices

P2, Switching Characteristics and Mechanism of Nano-Scale Memristors Based on Epitaxial ZnO Nano-Islands

P3, Investigation of Multi-Barrier ZnO-Schottky Contacts

P4, Interface Charge Characteristics of HfO2/ZnO Thin Films

P5, Low-Temperature Processed Schottky-Gated Field-Effect Transistors Based on Amorphous Gallium-Indium-Zinc-Oxide

P6, High Pressure Hydrogen Annealing of Indium-Gallium-Zinc Oxide Thin Film Transistors

P7, The Effect of Ga Doping on Bias Stress Stability of ZnO TFT

P8, Electrically Stable Amorphous InGaZnO Thin-Film Transistors and High-Gain Inverters

P9, Growth and Investigation of Hexagonal Zinc Oxide Microdisk Resonators

Q10, Growth Studies on Quaternary AlInGaN Layers for HEMT Application

Q1, ALD Al2O3 Thickness-Dependent Study of AlN/GaN MOS-HEMTs

Q2, Al2O3 Based Etch-Stop Technology for the Gate Recess in N-Polar AlGaN/GaN MIS-HEMTs with SixNy Passivation

Q3, MBE Regrown Ohmic Contacts with Rc of 0.15 ohm-mm in InAlN/GaN High Electron Mobility Transistor

Q4, Pre- and Post-Treatment Investigations of Al Oxide by Atomic Layer Deposition in Schottky Metal/Al Oxide/AlGaN/GaN MOS Diodes

Q5, GaN/Diamond AlGaN/GaN/AlGaN DH-HEMT Produced by Epi-Inverted Wafer Processing

Q6, AlxIn1-xN/GaN Heterostructures Grown by MEMOCVD

Q7, Lateral Confinement of Electrons and Quasi-1D Channels Based Devices

Q8, Polarization-Engineered GaN-Based Heterostructure for Normally-Off High-Electron Mobility Transistors

Q9, Tunneling Current via Dislocations in AlGaN/GaN Schottky Contacts

R10, Growth of III-Sb VECSELs for High-Power Continuous Wave Operation

R1, Improved Performance of Long-Wave Infrared InAs/GaSb Strained Layer Superlattices Detectors by Novel ZnTe Passivation

R2, Strain-Engineered Binary and Ternary Type-II Superlattice Structures and Photodiodes Grown by Metalorganic Chemical Vapor Deposition

R3, Study of Minority Carrier Lifetime and Background Carrier Concentration in GaSb-InAs Strained-Layer Superlattices and Bulk Epitaxial Layers by Optical Modulation Response

R4, Increased Thermophotovoltaic Efficiencies Using a Two Dimensional Photonic Crystal Cavity

R5, Effect of Dislocation Density on Thermal Boundary Conductance across GaSb/GaAs Interfaces

R6, Low Field Electron Transport in Mixed Arsenide Antimonide Quantum-Well Heterostructures

R7, AlGaSb/InAs-Based Staggered Heterojunction Tunnel Diodes

R8, Growth and Characterization of AlInSb Metamorphic Buffers on GaSb and GaAs Substrates for the Growth of MWIR Lasers

R9, Optimization of MBE Growth for the Development of Mid-IR II-VI Quantum Cascade Lasers

S10, LATE NEWS: Two Coherent Limits in Core-Shell Semiconductor Nanowires

S1, Photoluminescence of Chemical Vapor Deposition-Grown Diamond Nanowires

S2, Properties of ErAs and ErSb Nanorods Embedded in High-Index III-V Semiconductors

S3, Dynamic Control of Growth Kinetics for Three-Dimensional Semiconductor Nano-Heterostructures

S4, Structural Characterization of InGaAs Axial Inserts in GaAs Catalyst-Free Nanopillars Grown by Selective-Area MOCVD

S5, Control of III-V Nanowire Epitaxy by Precursor Chemistry

S6, LATE NEWS: Growth and Photoluminescence of GaP/GaNP Core/Shell Nanowires on Si(111) by Gas-Source Molecular Beam Epitaxy (GSMBE)

S7, Effect of Precursor Flow Rates on the Growth of InPSb Nanowires on InP(111)B

S8, Precise Placement and Diameter Control of Catalyst-Free Molecular Beam Epitaxy Grown GaN Nanowires

S9, Synthesis and Fabrication of ZnTe Nanosheet Field Effect Transistors for Photonic Applications

T1, Epitaxial Graphene Formation on Step-Free 4H-SiC(0001)

T2, Effects of Substrate Orientation and Growth Environment on the Structural and Electronic Properties of Epitaxial Graphene on SiC(0001)

T3, High Mobility Epitaxial Graphene on Sapphire via Metal-Free CVD

T4, Study of Epitaxial Graphene on Non-Polar 6H-SiC Faces

T5, Synthesis of a Pillared Graphene Nanostructure: A Three-Dimensional Hybrid Carbon Architecture

T6, Electrochemical Graphane Conversion Using E-beam Evaporated Metals for Catalytic Enhancement

T7, Highly Reproducible Growth of Carbon Nanotubes for Practical Applications in Electronics

T8, Graphene and Carbon Nanotube Growth in Vacuum Systems

U10, Highly Mismatched Oxide Alloy for Photovoltaic and Photoelectrochemical Applications

U1, Synthesis of Ge(1-x)Snx Alloy Thin Films Using Ion-Implantation and Pulsed Laser Melting (II-PLM)

U2, Nitrogen Ordering in Ga(NAs) at the Atomic Scale

U3, A Study of MBE Grown InSb1-xNx on GaAs for Long-Wavelength IR Applications

U4, Highly Mismatched GaN1-xAsx Alloys across the Entire Composition Range

U5, Band Edge Optical Transitions in Bulk GaSbN and InAsN Dilute-Nitride Materials

U6, Non-Monotonic Change/Variation in the Seebeck Coefficient of GaAs1-xNx Thin Film Thermoelectrics Due to the Addition of N (x = 0.5% to 1.5%)

U7, GaN1-xBix: Extremely Mismatched Alloys

U8, Electrical and Thermal Properties of InGaBixAs1-x

U9, Incorporation of Bismuth into GaAs and InAs Grown by Molecular-Beam Epitaxy

V1, Alkanethiol Island Formation on Single Crystal Zinc Oxide Surfaces

V2, Improved High Efficiency Organic Solar Cells via Incorporation of a Conjugated Polyelectrolyte Interlayer

V3, A Systematic Approach to Solvent Selection Based on Cohesive Energy Densities in a Molecular Bulk Heterojunction System

V4, Structure-Function-Property Relationships of Diketopyrrolopyrrole-Based Materials for Applications in Solution Processed Organic Solar Cells

V5, ALD-TiO2 to Enable Si as a Corrosion Resistant Photoelectrode for Water Oxidation and in Photoelectrochemical Solar Cells

V6, Performance Optimization of Branched Nanowire Heterostructure-Based Photoelectrochemical Cells for Water Solar Splitting

V7, Layer-By-Layer Assembly of Light Harvesting Arrays for Molecular Based Solar Cells

V8, Low Temperature Fabrication of Hybrid Carbon Nanotube Gel as a Counter Electrode for Efficient Dye Sensitized Solar Cells

W10, LATE NEWS: Charge and Mobility Enhancements in Graded In-Polar InAlN/AlN/GaN Hetero-Junctions

W1, Shape Transformation of Nanoporous GaN by Annealing: Buried Cavities and Nanomembranes

W2, Bulk GaN Growth on GaN Seeds of Varying Orientations in Supercritical Basic Ammonia

W3, Large-Area, Free Standing GaN by an Novel Nanoetching Process and Substrate Recycling

W4, Effect of Strain on Effective Masses in GaN and AlN

W5, Quasi Equilibrium Crystal Shapes and Kinetic Wulff Plots of Gallium Nitride Grown by Hydride Vapor Phase Epitaxy

W6, In Situ Stress Measurements during GaN Growth on Ion Implanted AlN/Si Substrates

W7, Effect of Indium Surfactant on N-Polar GaN Epilayers Grown by Metalorganic Chemical Vapor Deposition

W8, Schottky Barrier Height and Interface Chemistry for Metals Contacted to Low Dislocation Density AlGaN Grown on C-Oriented AlN Wafers

W9, Generation Mechanism of Threading Dislocations in Heteroepitaxial Growth of 2H-AlN on 6H-SiC (0001) Substrates

X10, Epitaxial LaAlO3/SrTiO3 Heterostructures by Atomic Layer Deposition

X1, Gate First In0.53Ga0.47As/Al2O3 MOSFETs with In-Situ Channel Surface Cleaning

X2, Structure of Electronic Defects near the SiC/SiO2 Interface

X3, Interface State Density for Positive Band Offset Dielectrics (Al2O3, SiO2) on GaN

X4, Comparison of Metal Deposition Methods by CV Analysis of ALD Al2O3 on In0.53Ga0.47As

X5, Passivation Effects of ALD Oxides on Self-Aligned In0.53Ga0.47As/InAs/InP Vertical Tunnel FETs

X6, Influence of Trimethylaluminium (TMA) Exposure on the Growth and Electrical Characteristics of HfO2/In0.53G0.47As Gate Stacks

X7, Investigation of Electrode Roughness and High-K Dielectric Barrier on Metal-Insulator-Metal Tunnel Diode Operation

X9, Solution-Processed Zirconium Oxide and Integration with Zinc-Tin Oxide Thin-Film Transistors

Y10, Hydrogen-Related Cathodoluminescence in Mg-Doped GaN

Y1, The Influence of Al Composition on AlGaN Point Defect Incorporation

Y2, Hybrid Functional Calculations of DX Centers in AlN, GaN and AlGaN

Y3, Deep Traps in M-Plane GaN Grown by Ammonia MBE

Y4, Intrinsic Surface States and Dislocations at GaN(10-10) Surfaces Investigated by Scanning Tunneling Microscopy

Y5, Defect Characterization of InGaN Layer by Deep Level Transient and Optical Spectroscopies

Y6, Misfit Dislocation Formation in Partially Strain-Relaxed (11-22) Semipolar InGaN

Y7, Observation of m-Plane Slip and Relaxation Orthogonal to the Projected c-Direction in (20-21) InGaN/GaN Partially Relaxed Layers

Y8, Stress Mapping Analysis by Ray Tracing (SMART): A New Technique for Residual Strain/Stress Measurement of Single Crystal Material Using Synchrotron White Beam

Y9, Charged Basal Stacking Fault (BSF) Scattering in Wide Band-Gap Semiconductors

Z10, Ternary InxGa1-xAs Nanowires on Silicon Substrates: 1D Heterogeneous Epitaxy, Bandgap Engineering, and Photovoltaics

Z1, Growth of Epitaxially-Embedded ErAs Films in GaAs

Z2, Improved Conductivity of GaAs-Based Tunnel Junctions Containing ErAs Nanostructures via Compositional Grading

Z3, Photoluminescence from the Direct Bandgap of Ge1-xSnx Alloys Grown by Molecular Beam Epitaxy

Z4, Fabrication and Characterization of Whispering Gallery Mode (WGM) Microdisk Resonator Based on Epitaxially Grown GeSn

Z5, Raman Study of Strained Ge1-xSnx Alloys

Z6, Study of Molecular Beam Epitaxial Grown HgCdSe for Infrared Applications

Z7, XMCD Measurement of Molecular Beam Epitaxy γ’-Fe4N Thin Films on LaAlO3(100) and MgO(100) Substrates

Z8, Sb Surfactant Use during GaInP and GaInAs Strain Relaxation

Z9, Sensitivity of Strained and Unstrained Structure Growth on GaAs (111)B

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