|About this Abstract
||Materials Science & Technology 2011
||MS&T'11 Poster Session
||107 Floating-Zone Growth and Characterization of Single Crystals of Transition Metal-Containing Orthosilicates
||Qi Tang, Ruediger Dieckmann
|On-Site Speaker (Planned)
To better understand defects and orientation-dependent transport of transition metal-containing orthosilicates, single crystals of cobalt orthosilicate, Co<SUB>2</SUB>SiO<SUB>4</SUB>, and manganese orthosilicate, Mn<SUB>2</SUB>SiO<SUB>4</SUB>, were grown along the three principle axes by using the floating-zone method. Good quality single crystals of high purity cobalt silicate were successfully grown in air at atmospheric pressure. The grown crystals were 30-60 mm in length and 6-10 mm in diameter. Well developed facets were found on all crystals grown. Impurity levels and the degree of a desired excess of silica in grown crystals were determined by using the ICP-AES technique. The presence of inclusions in grown crystals due to a small excess of silica was confirmed by TEM. Dislocation densities were determined upon etching to be on the order of 10<SUP> 5</SUP> to 10<SUP> 6</SUP> cm<SUP>-2</SUP>. Crack-free single crystals of Mn<SUB>2</SUB>SiO<SUB>4</SUB> were also successfully grown. Results from characterization work on Mn<SUB>2</SUB>SiO<SUB>4</SUB> single crystals will also be presented.