|About this Abstract
||2016 TMS Annual Meeting & Exhibition
||Computational Materials Engineering for Nuclear Reactor Applications
||Z-6: Dislocation Loop Sink Strengths: A 3D Phase-field Modelling Including Realistic Anisotropic Effects
||Ludovic Thuinet, Hadrien Rouchette, Alexandre Legris, Christophe Domain, Antoine Ambard
|On-Site Speaker (Planned)
A phase-field method is proposed to compute sink strengths of dislocation loops in irradiated materials. This model allows to consider various sink geometries, long range elastic interactions between dislocation loops and migrating defects, and to solve the diffusion equation in anisotropic media. A preliminary generic study is performed in isotropic media in order to compare the PF results to existing solutions in the literature. Then, a complete investigation of dislocation loops in Zr alloys is proposed, including the influence of the loop radius, density, nature (interstitial or vacancy) and type (loops in the prismatic or in the basal plane). It allows to show original results: the elastic bias induced by the shape anisotropy of interstitials promotes the growth of c basal loops of vacancy nature in presence of a prismatic loops. The coexistence of a loops with both interstitial and vacancy character will also be discussed.
||Planned: A print-only volume