|About this Abstract
||Materials Science & Technology 2019
||Late News Poster Session
||P1-119: Homojunction of Oxygen and Titanium Vacancies and Its Interfacial n–p Effect
||Yitian Wang, Siming Wu, Xiaoyu Yang
|On-Site Speaker (Planned)
We fabricate interfacial p-n homojunction of TiO2 by directly decorating interfacial p-type titanium-defected TiO2 around the n-type oxygen-defected TiO2 nanocrystals in an amorphous-anatase homogeneous nanostructure.Experimental measurements and theoretical calculations on the cell lattice parameters show that the homojunction of oxygen and titanium vacancies changes the charge density of TiO2; a strong EPR signal caused by oxygen vacancies and an unreported strong titanium vacancies signal of 2D 1H TQ-SQ MAS NMR are present. Amorphous–anatase TiO2 shows significant performance regarding the photogeneration current, photocatalysis, and energy storage, owing to interfacial n-type to p-type conductivity with high charge mobility and less structural confinement of amorphous clusters. A new “homojunction of oxygen and titanium vacancies” concept, characteristics, and mechanism are proposed at an atomic-/nanoscale to clarify the generation of oxygen vacancies and titanium vacancies as well as the interface electron transfer.