|About this Abstract
||2017 TMS Annual Meeting & Exhibition
||Recent Developments in Biological, Structural and Functional Thin Films and Coatings
||Silicon Doped Nanoparticles Embedded in Transparent Oxide Thin Films for Micro-optoelectronic Devices
||Gerald Ferblantier, Fabien Ehrhardt, Corine Ulhaq-Bouillet, Dominique Muller, Daniel Mathiot
|On-Site Speaker (Planned)
In this work we present a way to obtain silicon nanoparticles embedded in doped dielectric thin films. For the fabrication we used plasma enhanced chemical vapor deposition technique and ion implantation technique. In order to form silicon nanoparticles, thin films were heated at high temperature. The nanoparticles crystalline structure and size were assessed by energy filtered transmission electron microscopy technique. The distribution profile of the dopant elements within the host matrix was determined by the Rutherford backscattering spectroscopy method. The energy dispersive X-ray mapping, coupled with spectrum imaging on silicon plasmon, was performed to localize the dopant impurities versus the nanoparticles. Different behaviours were observed following the implanted dopant elements. Experimentally, we showed that phosphorus and arsenic dopant atoms were inserted in silicon nanoparticles. On the opposite, boron dopant atoms were localized around the nanoparticles. This could be interesting for electronic devices such as sensors using surface plasmon resonance.
||Planned: Supplemental Proceedings volume