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Meeting 2010 Electronic Materials Conference
Symposium TMS 2010 Electronic Materials Conference
Presentation Title JJ3, Anisotropic Carrier Mobility in GaN Quantum Well Grown in Non-Polar Direction: Polarization Induced Dipole and Interface Roughness Scattering
Author(s) Aniruddha Konar, Tian Fang, Nan Sun, Debdeep Jena
On-Site Speaker (Planned) Aniruddha Konar
Abstract Scope GaN-heterojunction based high-electrom mobility transistors (HEMT) has paved the way towards high speed, high power electronics. Though the built-in polarization field in polar-GaN (grown along c axis) has been exploited to achieve dopant free HEMT, for optical devices polarization field plays a negative role due to quantum confined Stark effect. GaN grown in polar direction cannot be used in bipolar devices due to unavailability of hole doping. Moreover, polar GaN-based MOSFET is hard to pinch-off due to inherent presence of two dimensional electron gas (2DEG) at GaN surface. So the recent trend is to explore optical and transport properties of GaN grown in non-polar (m or a plane) direction. Though optical properties of non-polar GaN based devices have been studied quite extensively, transport properties of these devices have not been addressed so far. In this work, we have theoretically investigated charge transport in non-polar GaN quantum well (QW) structures. Let us consider a thin non-polar GaN QW of thickness a sandwiched between aluminum nitride (AlN) barrier as shown in fig. 1a). To consider charge transport in this structure, we have figure out all sources of disorders present in the QW. One of the most important source of scattering mechanism for thin QW is interface roughness (IRF) as a result of improper growth conditions. GaN, grown along non-polar direction (m plane) shows parallel trench/stripe like patterns which extend infinitely perpendicular to c axis in the plane of GaN. Another new source of disorder in our structure is the polarization bound charges associated with each interface roughness. The difference of in-plane polarization of GaN and AlN induces bound charges at opposite faces of each roughness as shown in fig.1b). These bound charges can be modeled as infinite line charges ( fig 1c)) and carrier can scatter from the potential originating from these line charges. We have also considered remote ionized impurity scattering and polar optical phonon scattering in our calculation. Among all the scattering mechanisms mentioned in the above section, interface roughness and polarization-induced line charge scattering are anisotropic (carrier does not feel any potential along the direction of roughness and line charges) but remote ionized impurity and polar-optical phonon scattering found to be isotropic in nature. Using Fermi golden rule and Boltzmann transport equation electron mobility has been calculated. Mobility also shows anisotropic behavior as shown in fig. 2. At room temperatures mobility anisotropy washes out due to strong isotropic polar-optical phonon scattering. In conclusion, we have investigated the charge transport in GaN QW grown in non-polar direction and predicted anisotropic nature of carrier mobility.
Proceedings Inclusion? Undecided


A1, The Electrical Properties of Metal/Gd2O3/Si Gate Stacks and Their Dependence on the Structure of the Oxide Layer
A2, Spin Dependent Trap Assisted Tunneling in Gd2O3 Dielectrics
A3, Crystalline Lattice-Matched Ba0.7Sr0.3O on Si(001) as Gate Dielectric
A4, Rare-Earth Scandates/Tin Gate Stack on High Mobility Strained SOI for Fully Depleted (FD) Mosfets
AA10, Evolution and Growth of Nanostructures on ZnO with Staged Annealing
AA1, Vacancy Defect and Defect Cluster Energetics in Ion-Implanted ZnO
AA2, O-H-Li-Complex in Hydrothermally Grown Single Crystalline ZnO
AA3, Induced Gap States at Zinc Oxide Surfaces and Interfaces
AA4, Optical Properties of Gd Implanted ZnO Single Crystals
AA5, High-Resolution Laplace DLTS on MgxZn1-xO PLD Thin Films
AA6, Observation of a Strong Polarization Induced Quantum-Confined Stark Effect in MgXZn1-XO/ZnO Quantum Wells
AA7, Low Temperature Electrochemical Growth of ZnO Nanobelts, Nanowalls, Nanospikes and Nanowires: Growth Mechanism and Field Emission Study
AA8, Synthesis and Field Emission Characterizations of Well-Aligned Single-Crystal Al-Doped ZnO Nanowires Grown at Low Temperature
AA9, Correlation of ZnO Polar Surface Nanostructure with Native Point Defects
B1, Innovative Time-Resolved Optical Characterization Techniques for Monitoring of Carrier Dynamics in Wide Band Gap Semiconductors
B2, Raman Characterization Methodologies Suitable for Determining Graphene Thickness and Uniformity
B3, Characterizing the RF Properties of Semiconductors under Optical Illumination
B4, Admittance Spectroscopy of GaSb(100) and ALD / PEALD Al2O3 Dielectric Interface with Various Surface Treatments
B5, High Temperature Coefficient of Resistance Sputtered A-Ge for Uncooled Microbolometer Applications
B6, Temperature Dependence of the Lattice Constant of Popular III-Sb Binary and Quarternary Alloys
BB1, Demonstration and Room Temperature Electrical Characteristics of a Nitride Hot Electron Transistor with GaN Base of 10 nm
BB2, Novel Cs-Free GaN Photocathodes
BB3, Influence of MOVPE Growth Conditions on Intersubband Absorption in AlN –AlGaN Superlattices
BB4, Engineering Ferromagnetism in Gd-Doped GaN Two-Dimensional Electron Gases
BB5, Nearly Ideal Current-Voltage Characteristics of Schottky Barrier Diodes Directly Formed on GaN Free-Standing Substrates
C1, Pulsed-Laser Atom Probe Tomographic Analysis of Ge-Ge/Co/Mn Thin-Film Superlattices
C2, Atomic Scale Gate Electrode Formed by a Charged Defect on GaAs(110)
C3, Ordered Assemblies of Bimetallic Nanostructure Arrays Utilizing a Self-Assembled Disilicide Nanowire Template
C4, Scanned Probe Characterization of Self-Assembled ErAs/GaAs Semimetal/Semiconductor Nanostructures Grown by Molecular-Beam Epitaxy
CC1, High Al Composition Al0.72Ga0.28N/AlN/GaN Heterostructures with High Mobility Two-Dimensional Electron Gases
CC2, Two-Dimensional Electron Gas in InXAl1-XN/Aln/GaN Heterostructure Field-Effect Transistors Depending on Indium Composition
CC3, Source-Drain Regrowth by MBE in Metal-Face AlN/GaN HEMTs
CC4, AlGaN/GaN High Electron Mobility Transistors for Large Current Operation Achieved by Selective-Area Growth Using Plasma-Assisted Molecular Beam Epitaxy
CC5, Transport Studies of AlGaN/GaN Heterostructures with Variable SiNx Passivant Stress
D1, Review of Narrow Bandgap Semiconductor Based THz-Emitters
D2, Electrical and Optical Studies of Melt Grown Optical Grade InAs1-yPy
D3, Electrical and Optical Properties of Bulk Ternary InxGa1-xAs
D4, Optical and Thermal Properties of III-V Bulk Ternary InxGa1-xSb and InxGa1-xAs Crystals
DD1, Ultraviolet Photodetectors with Novel Oxide Thin Films
DD2, Polarization-Sensitive Schottky Photodiodes Based on A-Plane ZnO/ZnMgO Multiple Quantum-Wells
DD3, A New Approach to Make ZnO-Cu2O Heterojunctions for Solar Cells
DD4, Double Heterojunction Metal-Semiconductor-Metal Photodetector Using ZnO/Si Structure
DD5, A Study of Indium Doped-ZnO/p-Si(111) Diode Characteristics with Various In Mole Fraction
DD6, Effects of High - Energy Electron Irradiation on Pd/ZnO/Si MSM Photodetector: Conduction Mechanisms and Radiation Resistance
E1, Investigation of Physisorbed and Chemisorbed Sulfur Species for GaAs Wafer Bonding
E2, AlGaAs/GaAs/GaN Wafer Fused HBTs with Ar Implanted Extrinsic Collectors
E3, Effect of Surface Activation for Ge-Si Integration Using Wafer Bonding
E4, Strain, Annealing, and Exfoliation in Hydrogen Implanted GaN for Layer Transfer Applications
E5, Optimization of Adhesive Wafer Bonding for Silicon
E6, Development of Surface Activation Based Nano-Bonding and Interconnect System
EE1, Overgrowth Investigation of Epitaxial Semimetallic Nanoparticles for Photonic Devices
EE2, Regrown InGaAs Tunnel Junctions for TFETs
EE3, Molecular Beam Epitaxy of Very Thin Fluoride Films on Ge(111) and Its Application to Resonant Tunnelling Diodes
EE4, Hole Mobility Improvement in Strained InGaSb Quantum Well with Carbon Doping
EE5, Growth and Thermal Conductivity of Polycrystalline GaAs Grown on CVD Diamond Using Molecular Beam Epitaxy
EE6, Thick HVPE Growth of Patterned Semiconductors for Nonlinear Optics
EE7, Effects of Carrier Localization on Emission Spectra of Dilute GaAsN Materials Doped with Silicon
EE8, Fabrication and Characterization of Free-Standing InGaAs/GaAs Quantum Dot Microbelt-like Optical Resonators
EE9, MBE Grown InGaAsSbN/GaSb Single Quantum Wells for Mid-Infrared Applications
Epitaxial Graphene: Designing a New Electronic Material
F1, Applications of SiC Power Devices – A Materials and Device Perspective
F2, Review of the Dominant Scattering Mechanisms in SiC MOS Devices
F3, A Comparative Study of Thermal and Deposited Gate Oxides on 4H SiC
F4, Magnetic Resonance Studies of 4H SiC MOS Structures
F5, Influence of Geometry on Silicon Carbide JBS Diodes Conduction
FF1, The Influence of the Catalyst on Dopant Incorporation during Si and Ge Nanowire Growth
FF2, Size Effects in Semiconductor Nanowire Synthesis at the Ultimate Limit
FF3, Growth and Applications of Silicon/Germanium Axial Nanowire Heterostructures
FF4, SiGe/Si Selective Etch Structures for Nanowire Release and Assembly
FF5, Diffusion Formation of Nickel Silicides Contacts in Silicon Nanowires
FF6, Comparative Study of Ni-Silicide and Germanide Formation in Contacts to Si and Ge Nanowires
FF7, High Responsivity Vertical Si Nanowire Photodetector Arrays
FF8, Si Nanowire Mats for Large-Area Electronics
FF9, Jet-Printed and Dielectrophoretically Aligned Nanowires for Large Area Electronics
G10, Optimization of Dielectric Passivation of ZnO-Based Schottky Diodes
G1, Temperature Dependent Measurements of ZnO TFTs
G2, Flexible ZnO Temperature Sensors on Plastic Substrate
G3, Improvement of InGaZnO4 TFT Device Performance on Glass and Paper Substrates
G4, Sputtering of ZnO Thin Films for TFT on Polyimide Substrates
G5, Zinc-Tin-Oxide Thin-Film Transistors with Al2O3 and ZrO2 Gate Dielectrics
G6, Study of CV and Admittance Characteristics of ALD High-K Dielectric ZnO Capacitors
G7, Transparent Rectifying Contacts - A New Concept for Transparent Electronics
G8, Transition from Hopping to Band-like Transport in Solution-Processed Amorphous Zinc Tin Oxide Thin-Film Transistors
G9, A Comparative Study of the Effect of Heat Treatment on the Microstructure and Properties of Colloidal ITO Films and Cold-Sputtered ITO Films
GG1, Bulk-like Thermionic Energy Conversion Device Fabricated from Laminated Nanostructured Metal/Semiconductor Superlattices
GG2, Epitaxial Growth of Transition Metal Nitrides on MgO via DC Magnetron Sputtering
GG3, Enhancement of Thermoelectric Efficiency in Si1-xGex/Si Heterostructures
GG4, Isothermal Method for Rapid, Steady-State Measurement of Thermoelectric Materials and Devices
GG6, Thermomagnetic Transport Properties of (AgxSbTex/2+1)15(GeTe)85 Thermoelectric Materials
GG7, Thermoelectric Properties of Sn-Rich Pb1−xSnxTe Alloys Doped with Indium
GG8, Incorporation of AgSbTe2 to Pb1-xSnxTe by Mechanical Alloying of End Compounds
GG9, Electron Transport Properties of Mechanically Alloyed N-Type Pb1-xSnxTe Thermoelectric Elements
H1, Molecular Contact Doping in Organic Thin-Film Transistors
H2, Gate Dielectric Thickness Dependence of OTFT Performance
H3, Arylene Diimide-Thiophene Semiconductors for n-Channel Field-Effect Transistors
H4, Advanced X-Ray Peak Shape Analysis of Organic Semiconductors: Insights into Crystalline Size, Strain, Intragrain Disorder and Implications for Charge Transport
H5, Probing Stress Effects in Single Crystal Organic Transistors by Scanning Kelvin Probe Microscopy
H6, Study on the Resistance of Stretchable Electrodes from Surface Morphology Aided by Computer Modeling
H7, Reverse Offset Roll Printing Using High Resolution Printing Plate for Electronic Application
H8, A Novel Hybrid Electrical and Chemical Barrier Material for Flexible Electronics
HH1, Effect of Contact Modification on Charge Transport at Different Length Scales in Poly(3-Hexylthiophene)-Based Bottom-Contact Field-Effect Transistors
HH2, Low Pressure Chemical Vapor Deposition of Conformal Boron Thin Films on Deep RIE-Etched Si Substrates
HH3, Assessment of the Passivation Capabilities of Two Different Covalent Modifications on GaP (100)
HH4, Comparison of Ga-Polar and N-Polar GaN by KOH Photoelectrochemical Etching
HH5, N-Type Electrodes for GaN-Based Vertical Light Emitting Diodes
HH6, In-situ Ohmic Contacts to p-InGaAs
HH7, Degradation of Ohmic and Schottky Contacts on InGaAs MHEMTs during Bias Stressing
HH8, Characterization of Thin InAlP Native Oxide Gate Dielectric Layers for GaAs MOSFET Applications
HH9, Post-Growth InGaAsP Quantum Well Intermixing for High Saturation Power Semiconductor Optical Amplifiers
I10, Growth and Characterization of In1-xMnxSb Ferromagnetic Semiconductor Alloys Using Metal Organic Vapor Phase Epitaxy (MOVPE)
I1, An Organic-Based Magnetic/Nonmagnetic Semiconductor as a Spin Polarized Carrier Source/Channel: Moving Toward Organic Spintronics
I3, Observation of Antiferromagnetic Interlayer Exchange Coupling in a GaMnAs/GaAs:Be/GaMnAs Tri-Layer
I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED)
I5, Properties of MnAs/GaMnAs/MnAs Magnetic Multilayers and Their Application to High Temperature Vertical Spin Valves
I6, The Magneto-Optic Kerr Effect (MOKE) as a Measure of Strain-Induced Ferromagnetism in EuTiO3 Grown by Molecular-Beam Epitaxy
I7, Magnetic Circular Dichroism (MCD) Studies on GaMnAs
I8, Magneto-Optical Spectroscopy of MOVPE Grown Ferromagnetic Semiconductors
I9, Micromagnetic Simulation of Focused Ion Beam Patterned Cobalt-Platinum Multilayers
II1, Reduction in Operation Voltage of Light Emitting Diodes Fabricated in Si/III-V-N/Si Heterostructure
II2, GaN/AlN Heterostructures on Vertical {111} Fin Facets of Si (110) Substrates
II3, 2μm Thick Device Quality GaN on Si(111) Using AlGaN Graded Buffer
II4, Compositionally-Graded Layers Composed of Tandem InGaAs InGaP Alloys and Pure GaAsSb Alloys to Engineer the InP Lattice Constant on GaAs Substrates
II5, Characterization of Standard and Ferromagnetic Schottky Barriers on GaP/GaP and GaP/Si Epi-Layers
II6, Silicon Nanostructures Ion Implanted with Carbon and Nitrogen as an Electron Emitting Device
II7, High-Quality (211)B CdTe on (211) Si Substrates Using Metal-Organic Vapor-Phase Epitaxy
II8, Metalorganic Vapor Phase Epitaxial Growth of (211)CdTe on Nanopatterned (211)Ge/Si Substrates Using Full Wafer Block Copolymer Lithography
II9, Effects of Ex-Situ Cycle Annealing on Dislocation Densities of HgCdTe/CdTe/Si Layers
J10, Enhanced Light Absorption in Thin-Film Silicon Solar Cells by Scattering from Sub-Surface Dielectric Nanoparticles
J1, MBE Growth of Metamorphic InGaP on GaAs and GaP for Wide-Bandgap Photovoltaic Junctions
J2, InxGa1-xAs Metamorphic Buffer Layers for Lattice Mismatched Multi-Junction Solar Cells
J3, Quantum Dot n-i-p-i Photovoltaic Devices
J4, Characterization of a p-i-n Photovoltaic Cell Containing InAs/GaAs Quantum Dots
J5, MBE Growth of Lattice-Matched 6.1 II-VI on GaSb Substrates
J6, ZnO/ZnTeO/ZnTe Heterojunctions for Intermediate State Solar Cells
J7, Copper Zinc Tin Sulfide Solar Cell Development by RF Sputtering from Binary Targets
J8, Chemical Vapor Deposition of CsSnI3 Thin Films for Photovoltaic Applications
J9, Exploring More Effective Catalysts for Metal-Induced Growth of Thin Film Si
JJ1, Internal Quantum Efficiency of Polar and Non-Polar GaInN/GaN Multiple Quantum Wells
JJ2, Optical Polarization of Non-Polar GaInN/GaN LEDs
JJ3, Anisotropic Carrier Mobility in GaN Quantum Well Grown in Non-Polar Direction: Polarization Induced Dipole and Interface Roughness Scattering
JJ4, MBE Growth of Nitrogen-Face Aluminum Nitride by Polarity Inversion Using Magnesium Overdoping
JJ5, Electro-Thermo-Mechanical Simulation of AlGaN/GaN HFETs and MOSHFETs
K10, Growth and Lift-off of High-Quality GaN Thin Films Using Self-Assembled Silica Microsphere Monolayers
K1, Molecular Beam Epitaxy of Catalyst-Free InGaN/GaN Nanowires on (001) Silicon and Nanowire Light Emitting Diodes
K2, Photoluminescence of Bandgap-Graded InGaN Wires Grown by Molecular Beam Epitaxy
K3, Growth of Dislocation-Free and High-Indium-Content InGaN/GaN Coaxial Nanowires
K4, Threshold Studies of Optically Pumped GaN Nanowire Lasers
K5, GaN Nanowire MOSFETs with Fully Conformal Cylindrical Gates
K6, Formation Mechanisms and Kinetics of Negative Nanowires in GaN and ZnO Using In-Situ Transmission Electron Microscopes
K7, Self-Assembled GaN/AlN Nanowire Superlattices on Si toward Non-Polar Intersubband Photonics
K8, HVPE Homoepitaxy of p-Type GaN on n-Type Catalyst Free GaN Nanowires
K9, Homoepitaxial Nucleation of GaN Nanowires in Grooves
KK1, Mg Doped InN and Search for P-Type InN
KK2, Dislocation Reduction via Epitaxial Lateral Overgrowth of InN by Selective-Area-Growth of RF-MBE
KK3, Growth Orientation Control of InN by Pulsed Excitation Deposition
KK4, Optical and Electrical Transport Properties of Nearly Intrinsic and Si-Doped InN Nanowires
KK5, Growth Optimization of Si3N4 on GaN by Metal-Organic Chemical Vapor Deposition
L10, High Temperature Transport Properties of GaN HEMTs with Various Heterostructure Designs
L1, Formation of Structural Defects in AlGaN/GaN High Electron Mobility Transistors under Electrical Stress
L2, Electrical Properties of GaN/AlN/GaN Heterostructures: Presence of 2DHG
L3, Study of Cause of Gm-Collapse for Higher Gate Voltages in N-Polar GaN HEMTs with Scaled GaN Channels
L4, Polarization-Engineered Low-Leakage Buffers for Nitride HEMTs Grown by MBE
L5, The Influence of High-k Gate Dielectrics on Deep Traps in AlGaN/GaN High Electron Mobility Transistors Measured by Deep Level Spectroscopy Methods
L6, PECVD-SiN, Si or Si/Al2O3-Capped ED-Mode AlN/GaN Inverters
Hide details for [<a href="/PM/PM.nsf/ApprovedAbstracts/88F0B36ABE9F8E58852576BD0013E7D2?OpenDocument">L8,  Demonstration of EnL8, Demonstration of Enhancement Mode AlN/Ultrathin AlGaN/GaN HEMTs Using Selective Wet Etching
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L9, Growth and Characterization of InGaN Heterojunction Bipolar Transistors
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LATE NEWS: H9, ZnO Nanowire Based Visible-Transparent UV Detectors on Flexible Substrates
LATE NEWS: L7, Molecular Beam Epitaxy of N-Polar InGaN
LATE NEWS: N10, Controlled Fabrication of 1D or Semi-2D Molecular Nanostructures and Study of Optical Properties
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M1, Material and Electronic Properties of CVD Graphene Grown on Ni and Cu then Transferred to Insulators
M2, Fabrication and Characterization of Graphene Materials Grown via CVD on Copper Based Substrates
M3, Kinetic Limitations in the Formation of Graphene on the C-Face of SiC
M4, Graphene to Graphane: Novel Electrochemical Conversion and Possible Applications
M5, Growth of Few Layer Graphene on C-Face SiC
M6, Graphene Growth on SiC, SiO2, and Sapphire with Carbon Addition
M7, Ultrafast Transient Absorption Microscopy Studies of Carrier Dynamics in Epitaxial Graphene
M8, Comparison of Graphene Thickness Determination for MBE Grown Graphene on SiC Using Raman, XPS, and TEM
N1, STM Studies of Hybrid Inorganic-Organic Molecular Magnets on an Ultrathin Insulating Film
N2, Effect of Molecular Tilt Configuration and Interface Dipoles on Molecular Electronic Conduction
N3, Improvement of Transfer Characteristics in Carbon Nanotube Field-Effect Transistors with Au Nano Clusters
N4, Carbon Nanotube Field-Effect Transistor Biosensor with Schottky Barrier Control Gate Electrode
N5, Breakdown Statistics and Nanowire Device Integration of Self-Assembled Nano Dielectrics
N6, Functionlization Studies on GaN Nanowires
N7, Olefin Metathesis Reaction on GaN (0001) Surfaces
N8, Protection of ZnO Nanowires for Liquid-Phase Sensing
N9, Signal-to-Noise Ratio Improvement of Magnetoelectric Laminate Sensor by Multilayer Structure and Direct Integration with Advanced Microelectronics
O10, Vanadium Doping Using VCl4 Source during the Chloro-Carbon Epitaxial Growth of 4H-SiC
O1, Analysis of Dislocation Interactions in Low Dislocation Density, PVT-Grown, Four-Inch Silicon Carbide Single Crystals
O2, Formation of a (5-1)-Bilayer-Height Complex Step-and-Terrace Structure on 4H-SiC (0001) by a Spiral Etching Process
O3, Processes Controlling the Carrier Lifetime in n- 4H-SiC Epilayers with Low Z1/2 Concentrations
O4, Comparative Studies of Carrier Dynamics in 3C-SiC Layers Grown on Si and 4H-SiC Substrates
O5, Expansion and Contraction of Stacking Faults in 4H-SiC
O6, Influence of Stacking Fault Generation and Half Loop Array on Electrical Behavior of 4H-SiC 10 kV PiN Diodes
O7, Reducing Basal Plane Dislocation Density in Nitrogen and Aluminum Doped 4H-SiC Epilayers
O8, Improved Surface Morphology of 4H-SiC Homoepitaxial Layers Grown on Si-Face 4 off-Axis Substrates
O9, High-Purity Semi-Insulating 4H-SiC Homoepitaxy at a High Growth Rate Using Dichlorosilane for High Power Devices
P10, Dissociation of Photo-Generated Excitons on Carbon Nanotubes at Type-II Heterojunctions
P1, Fabrication of Individual Silicon Nanowire Radial Junction Solar Cells
P2, Wire Textured Multicrystalline Silicon Solar Cells
P3, Efficiency Enhancements for Copper Contaminated Radial p-n Junctions over Planar p-n Junctions in Silicon
P4, Wafer Scale Si Nanowire Arrays for Photovoltaic Applications
P6, Branched ZnO/Si Nanowire Heterostructure Based Photoelectrochemical Cell for Efficient Water Splitting
P7, Solar Cells Based on ZnO/ZnS Core-Shell Nanowires Arrays
P8, Fabrication of Subwavelength Pillar Arrays on GaAs by Confined Self-Assembly Technique for Broadband Antireflection Coating
P9, Hybrid Solar Cell Based on Patterned Nanopillar/P3HT Heterojunction
Q10, Application of Many Electron Charge Transfer Multiplet (CTM) Theory to Band Edge and Band Defect States in High-K Gate Dielectrics and Complex Functional Oxide Thin Films
Q1, Pulsed-dc Reactive Sputtering Vanadium Oxide Thin Films for Microbolometers
Q2, Defects in Low-κ Dielectrics and Etch Stop Layers for Use as Interlayer Dielectrics in ULSI
Q3, Nanocluster and Nanocrystalline Si Trap Distributions within SiO2/SiOx/SiO2 Field Oxides for Radiation-Tolerant Electronics
Q4, Nanoscale Depth-Resolved Electronic Properties of HfO2/RPAN/Ge and HfSiON/RPAN/Ge Gate Dielectrics for Radiation-Tolerant Electronics
Q5, Nano-Gap Electrodes Formed at the Exposed Edge of Au/Al2O3/Au Tunnel Structures Grown by Atomic Layer Deposition
Q6, Surface-Interface Conductivity in Thin Film Gd-doped CeO2
Q7, Growth of Heteroepitaxial SrRuO3 Electrodes on CeO2 Buffered R-Plane Al2O3 Substrates by RF Magnetron Sputtering
Q8, Evidence of Ferroelectricity Induced by Epitaxial Strain in Calcium Titanate Thin Films Grown by Molecular-Beam Epitaxy
Q9, Synchrotron Spectroscopy Detection of Spin-Polarized Bands and Hopping-Induced Mixed Valence for Ti and Sc in GdSc1-x TixO3 for x = 0.18 and 0.25
R10, Synthesis and Charaterization of p-NiO/n-ZnO Heterojunction Diode by Spray Pyrolysis
R1, Nucleation Layer Based Optimization of MOCVD Grown ZnO by In Situ Laser Interferometry
R2, Influence of Substrate Temperature and Post-Deposition Anneal on Material Properties of Ga-Doped ZnO Prepared by Pulsed Laser Deposition
R3, Epitaxial Electrochemical-Deposition of ZnO on Graphite and p-GaN Substrates
R4, Control of ZnO Epitaxial Growth via Focused Ion Beam Induced Damage in Lattice-Mismatched Substrates
R5, Properties of Nitrogen Molecules in ZnO
R6, High-Quality p-Type ZnO Layers Grown by Co-Doping of N and Te
R7, Magnetic Properties of Mn and N Doped ZnO
R9, Hydrothermal Synthesis of Wide Bandgap BexZn1-xO Nanorods for Solar Blind Photodetection
S1, Effect of Inaln Electron Blocking Layer in Visible Light-Emitting Diodes on Quantum Efficiency Grown by Metalorganic Chemical Vapor Deposition
S2, Fabrication of GaN-Based Laser Diode and Laser Diode Facet Formation
S3, Performance Improvement of AlInGaN Visible Laser Diodes by Epitaxial Layer Design
S4, Enhancement of the Light-Extraction Efficiency of GaN-Based Light-Emitting Diodes Using a Graded-Refractive-Index Layer
S5, Nano-Fabrication of Green AlGaInN LEDs – Structural Wavelength Control and Enhanced Light Extraction
T1, Polarization Induced p-Doped Nitride Quantum Well UV LEDs
T2, Structural Characterization of Highly Conducting AlxGa1-xN (x >50%) for Deep Ultraviolet Light Emitting Diode
T3, Epitaxial Growth and Doping of AlGaN Alloys on AlN Single Crystal Substrates
T4, Morphological Development of Homoepitaxial AlN Thin Films Grown by MOCVD
T5, Aluminum Gallium Nitride Alloys Grown via Metal Organic Vapor Phase Epitaxy Using Digital Alloy Growth Technique
U1, Sub-20 nm Patterning of Graphene Nanoconstrictions Using Nanosphere Lithography and Characterization of Its Electronic Properties
U2, Carrier Transport in Graphene P-N Junctions
U3, Epitaxial Graphene Materials Integration: Effects of Dielectric Overlayers on Structural and Electronic Properties
U4, Comparison of Ballistic Performance of Graphene and Planar III-V MOSFETs for RF Low Voltage Applications
U5, Graphene Fundamental Trade-offs and Asymmetric Bandgap Opening
U6, Hall Effect Mobility of Epitaxial Graphene on Si-Face SiC
U7, Highly Efficient Photovoltaic Devices with Transparent Graphene Electrode and TiOX Layer
U8, Integrated Circuits Based on Carbon-Nanotube Transistors and Amorphous-Carbon Thin-Film Load Resistors
V1, Toward Conversion from Electron Pairs to Photon Pairs in Quantum Dots
V2, Tensile-Strained Self-Assembled III-V Nanostructures
V3, Self-Assembled In0.5Ga0.5As Quantum Dots on GaP(001)
V4, Time-Resolved Spectroscopy of Single Colloidal CdSe Nanowires with Picosecond Resolution
V6, Resonant Periodic Gain InAs Quantum Dot VECSEL
V7, Quantum Dot Light Emitting Devices and Exciton Recombination Zone
V8, Thermal Stability in Emission Peak in Multilayer InAs/GaAs Quantum Dot Heterostructure in Laser Application
V9, Enhancement of Luminescence Efficiency in InAs/GaAs Quantum Dots by Proton Irradiation
W10, Simulation of the Influence of Grain Boundaries on Resistivity via the Wigner-Fokker-Planck Equation
W1, Single Crystalline Wurtzite GaAs Nanoneedles Epitaxially Grown on Highly Lattice-Mismatched Sapphire with Bright Luminescence
W2, Twinning Superlattice in VLS Grown <110> Planar GaAs Nanowires Induced by Impurity Doping
W3, Photoluminesence of InGaAs Nano-Pillar Arrays on GaAs Substrate
W4, Synthesis and Characterization of GaAs/MnAs Core/Shell Nanowires
W5, Contact Laser Annealing Effects on Indium Oxide Nanowire Transistors
W6, Vertical InSb Nanowire Arrays Electrodeposited into Porous Anodic Alumina Templates on Silicon Substrates
W8, Formation of Periodic Nanostructures through Kirkendall Constitutional Interdiffusion in Epitaxial Heterostructures
W9, Thermal Conductivity of Aluminum Nanowires near Room Temperature: Direct Measurements and Theory
X10, Effect of Aluminum Composition on Current-Voltage Characteristics of AlGaSb/InAs Tunnel Junction
X1, Minority Carrier Lifetime in LWIR Type II Superlattice Detector Structures Using Time-Resolved Photoluminescence
X2, MOCVD Growth of InAs/GaSb Type-II Superlattice Structures and Photodiodes for Mid-Infrared Detection
X3, Investigation of Passivation Techniques on InAs/GaSb Strained Layer Superlattice Long Wave Infrared Detectors
X4, Investigation of Antimonide Infrared Detectors Based on the nBn Design
X6, Quinternary GaInAsSbP on GaAs Substrates Grown by Metal Organic Vapor Phase Epitaxy (MOVPE)
X7, Growth of GaAs1-xBix/AlyGa1-yAs Multi-Quantum Well Structures on GaAs
X8, Perforated (In)GaSb Quantum Wells on GaSb Substrates through the Use of As2 Based In-Situ Etches
X9, Antimonide VECSELs on AlGaAs DBRs
Y1, Dislocation Filtering in GaN Nanorods
Y2, Threading Defect Elimination in GaN Nanostructures
Y3, Yellow-Orange Luminescence from III-Nitride Nanopyramid Heterostructures
Y4, Molecular Beam Epitaxial Growth and Characterization of InGaN/GaN Dot-in-a-Wire Nanoscale Heterostructures on Si
Y5, Electrochemical Etching of GaN and Its Applications
Z1, Luminescence Recombination Dynamics of Ytterbium Implanted GaN Epilayers
Z2, Energy Levels of Nd3+ Ions in In Situ Doped AlN
Z3, Correlation of InGaN Growth Parameters, Defects and MQW Radiative Efficiency for Blue to Green Emission
Z4, Proton-Irradiated AlGaN/GaN HEMT at 5 MeV Protons
Z5, Effect of Traps Spatial Localization on GaN HEMT Static Characteristics

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