| About this Abstract |
| Meeting |
MS&T21: Materials Science & Technology
|
| Symposium
|
Solid-state Optical Materials and Luminescence Properties
|
| Presentation Title |
Highly Transparent MgGa2O4 and Ni Doped MgGa2O4 Semiconducting Ceramics |
| Author(s) |
Guangran Zhang, Yiquan Wu |
| On-Site Speaker (Planned) |
Guangran Zhang |
| Abstract Scope |
MgGa2O4 is considered as a new wide bandgap transparent semiconducting oxide, with an optical bandgap of 4.9 eV at a room temperature. Growing atmosphere will strongly affect conductivity of fabricated MgGa2O4 single crystals. The presence of oxygen can turn semiconducting MgGa2O4 crystal into an insulator. In addition, Ni-doped MgGa2O4 has been developed as a promising host material for tunable near IR laser applications. Such spinel structured material was fabricated into transparent ceramics by spark plasma sintering in our work for the first time. The highest in-line transmittance achieved in the transparent MgGa2O4 and Ni:MgGa2O4 ceramics is about 73% at a wavelength of 1050nm with a relative density above 99.5%. Photoluminescence and absorption spectrum were characterized to explain transition of octahedral Ni2+ doped in MgGa2O4 and to calculate bandgap of the transparent MgGa2O4 ceramics. Tanabe-Sugano diagram is also plotted for the 1 at% Ni:MgGa2O4 ceramics to explain energy level. |