|About this Abstract
||Materials Science & Technology 2012
||MS&T'12 Poster Session
||C3: Combinatory and Standalone Illumination and Electrical Stress Testing of Indium Gallium Zinc Oxide Thin Film Transistors
||Sebastian Husein, Rajitha Vermuri, T.L. Alford
|On-Site Speaker (Planned)
Indium-gallium-zinc oxide (IGZO) thin film transistors (TFTs) were subjected to standalone bias and illumination stressing along with simultaneous bias and illumination stressing to characterize the effects on mobility, ionized vacancy creation, carrier generation, and stability of the TFT device. In addition, the underlying phenomena of the influence of illumination by different wavelengths of light were investigated. One noted aspect of this work is the improvement in the on/off current (Ion/Ioff) ratio, contrary to similar studies where the Ioff increased and Ion decreased. Upon removal of the stressing factors, recovery testing was also performed, and the TFTs exhibited incomplete recovery. It was shown that low temperature processing and optimized post anneal processing has led to fabrication of TFTs with reduced defects and vacancy densities that are more stable than the previous generation of IGZO TFTs.
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