|About this Abstract
||2017 TMS Annual Meeting & Exhibition
||GAT-2017 (Gamma Alloys Technology - 2017)
||F-43: Atom Probe Investigation of the Partitioning of Impurities in TiAl Alloy
||Gong Zheng, Zhixiang Qi, Yingbo Peng, Guang Chen, Zhijun Ge
|On-Site Speaker (Planned)
Some impurity elements’ distribution (O, N, C, Si) in the α2+γ lamellar structure of binary Ti-46.3Al and ternary Ti-45Al-8Nb alloys was characterized by using atom probe tomography. It is found out that O and N mainly partition to the α2 phase as interstitial atoms, but with the addition of Nb the concentration of O and N in the alloys rises a lot, especially in the γ phase, in which the O’s concentration rises from ~300 at. ppm to ~6000 at. ppm. C was also found to partition to the α2 phase, but not as clearly as O and N do. In addition, there is a tendency that C segregates at the interfaces, which indicates that the distribution of C is in between interstitial atoms and substitutional atoms. Si was found to segregate at interfaces just like the distribution of Nb, indicating the existence of Si in the alloys is substitutional.
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