|About this Abstract
||Materials Science & Technology 2012
||International Symposium on Defects, Transport and Related Phenomena
||TEM and CBED Techniques for the Study of Point Defect Structure of Single Crystal YAG Scintillators
||Ashley Gan, James D. McGuffin-Cawley, Krishna Rajan
|On-Site Speaker (Planned)
Limits to the efficiency of promising Ce activated YAG scintillators is associated with the trapping of electrons or holes at point defects such as oxygen vacancies and cation antisites. Atomistic simulations suggest that annealing and doping with aliovalent species reduce the concentration of point defects, hence increasing the efficiency. Details of the defects, however, have not been fully determined. Convergent beam electron diffraction (CBED) and transmission electron microscopy (TEM) results have been compared to Java electron microscopy simulation (JEMS) simulations to detect strain-induced changes in lattice parameters resulting from the introduction of dopants in interstitial or substitutional lattice sites. Results and experimental approach will be described.