|About this Abstract
||2016 TMS Annual Meeting & Exhibition
||Nanostructured Materials for Nuclear Applications
||Non-random Walk Diffusion Enhances the Sink Strength of Semicoherent Interfaces
||Aurélien Vattré, Thomas Jourdan, Hepeng Ding, Cosmin Marinica, Michael Demkowicz
|On-Site Speaker (Planned)
We show that elastic interactions between point defects and semicoherent interfaces lead to a marked enhancement in interface sink strength. Our conclusions stem from simulations that integrate object kinetic Monte Carlo with anisotropic elasticity calculations of interface stress fields. Elastic interactions of interfaces with vacancies and interstitials are characterized using elastic dipole tensors computed from first principles. Surprisingly, the enhancement in sink strength is not due primarily to increased thermodynamic driving forces, but rather to reduced defect migration barriers, which induce a preferential drift of defects towards interfaces. The sink strength enhancement is highly sensitive to the detailed character of interfacial stresses, suggesting that “super-sink” interfaces may be designed by optimizing interface stress fields. Such interfaces may be used to create materials with unprecedented resistance to radiation-induced damage.
||Planned: A print-only volume