|About this Abstract
||2018 TMS Annual Meeting & Exhibition
||Phase Stability, Phase Transformations, and Reactive Phase Formation in Electronic Materials XVII
||A Phase-field Model on Electromigration-induced Transgranular Void Migration in Interconnects
||Jaykumar Santoki, Daniel Schneider, Arnab Mukherjee, Michael Selzer, Britta Nestler
|On-Site Speaker (Planned)
Electromigration damage in thin films has garnered much attention due to its implication in efficient designing of interconnects. Perhaps the most pervasive form of failure is the migration of voids which typically nucleate at current crowding zones. Voids can migrate along the line preserving its shape or bifurcate and evolve into various time-dependent configurations which are governed by the interplay between capillarity and electron wind force. In the present work, we employ a phase-field method to study various regimes of void migration. While the voids drift, they conserve their circular shapes in the capillarity-dominated regime and transform into a finger-shaped slit in the electromigration-controlled regime where the shape is preserved only near the tip region. Various scaling laws, namely the steady state velocity and slit width dependence on electric field strength are discussed. Finally, a microstructural damage map is constructed to predict the void evolution pathway.
||Planned: Supplemental Proceedings volume