|About this Abstract
||2017 TMS Annual Meeting & Exhibition
||Frontiers in Materials Science, Engineering, and Technology: An FMD Symposium in Honor of Sungho Jin
||Harvesting Light from Silicon via Colloid-induced Stressed Interface Processed by Deposition of Sol-Gel-based Silica
||Sufian Abedrabbo, Anthony T. Fiory, Nuggehalli M. Ravindra
|On-Site Speaker (Planned)
Novel phenomenon of enhanced radiative recombination in indirect band-gap silicon is revealed by engineering a colloid-induced stressed interface. This is achieved by the deposition of sol-gel containing catalysis for silica formation in acidic environment that yields colloidal suspension in the sol that is cured by heat treatment; thus obtaining stressed texture in the silica layer. Band-gap emission from at 1.1 eV has been observed and is believed to be the resultant of these highly inhomogeneous stresses that shield the free-carriers from non-radiative decays by modulating the band-gap. The emission is noted to be two orders of magnitude greater relative to unperturbed silicon, marking the onset of an unexpected behavior and possible new theories. Radiative recombination in Czochralski (CZ) silicon samples are studied as function of strains and stresses levels. Postulate and quantification of the stress and strain modulation of the band-gap is presented.
||Planned: Supplemental Proceedings volume