Outstand understanding for intrinsic stresses and defects evolution in photovoltaic devices became an essential part of new developments. In particular, Multi-Junction PV depend on multi-layers structures that may suffer a high dislocations-density as a result of high lattice and thermal mismatch. These defects limit the performance, reliability, and lifetime of PV devices.
In the current study, a three-dimensional multiple-slip dislocation-density model, specialized finite-element formulations are used to investigate InGaN growth on Si substrates. The formulation is based on accounting for thermal and intrinsic stresses as a result for different processing conditions and microstructures. Furthermore, the formulation was used to investigate a recently developed technique, embedded void approach (EVA), which can be used to address both the high density of defects and the cracking/bowing of InGaN growth on Si. The current work lays the groundwork for more extensive use of silicon in MJ-PV devices.