|About this Abstract
||2017 TMS Annual Meeting & Exhibition
||Phase Stability, Phase Transformations, and Reactive Phase Formation in Electronic Materials XVI
||The Investigation of Electromigration Defects due to Currents Stress Effects between the Flip-chip Solder and Copper Substrate
||Wei-Jhen Chen, Yue-Lin Lee, Ti-Yuan Wu, Ang-Tin Tsai, Ming-Tzer Lin
|On-Site Speaker (Planned)
In this study, the investigation of electromigration defects due to currents stress effects between solder and copper substrate were performed. Experiments were tested during heating; heating and applied current; heating, applied current and applied stress. We observed micro-structural changes, measured resistivity changes and stress were provided by using four-point probe measurements. The results show that intermetallic compound thickness increases with increasing heating time both 100℃ and 200℃. For heat-treated only samples, the intermetallic compound growth mechanism controlled by grain boundary diffusion. For applied current and heating samples, the intermetallic compound growth mechanism was dominated by volume diffusion and interface reaction. For the heating, applied current and applied stress groups, the intermetallic compound growth mechanism were dominated by grain boundary diffusion with grain growth. The percentage increase in the resistivity changes linearly, as the temperature increases the slope increases, resistivity change with the film micro-structural changes are closely related.
||Planned: Supplemental Proceedings volume