|About this Abstract
||2018 TMS Annual Meeting & Exhibition
||Advanced Microelectronic Packaging, Emerging Interconnection Technology, and Pb-free Solder
||Electromigration Behavior of Printing Ag Nanoparticles Interconnects
||Wan-Hsuan Lin, Fan-Yi Ouyang
|On-Site Speaker (Planned)
Printing technology is one of the promising patterning techniques in flexible electronic devices due to its low cost and large-area patternability. Electromigration (EM) associated with open-circuit failure would be a serious problem in metal interconnects. In this study, EM behavior of printed interconnects composed of Ag nanoparticles was evaluated under a current density of 104 A/cm2 at 150°C through in-situ resistance versus time measurement. During the EM test, the resistance of the interconnects continues to increase and the morphologies of Ag nanoparticles changed due to Joule heating generated under high current density, eventually causing failures of the interconnects. The Ag interconnects with different lengths from 100 to 400 μm were also examined and discussed. In addition, the reliability of the printed Ag interconnect would be compared to that of conventional deposited Ag interconnect under the same condition.
||Planned: Supplemental Proceedings volume