|About this Abstract
||2018 TMS Annual Meeting & Exhibition
||Metal-Matrix Composites Innovations, Advances and Applications: An SMD Symposium in Honor of William C. Harrigan, Jr.
||The Effect of Si on the Interface Reaction of Ti3SiC2/Al Composites
||Jianbo Zhang, Taotao Hu, Yiming Jin
|On-Site Speaker (Planned)
A series of Ti3SiC2/Al-Si dense composites with 4、10、20% w.t.% Si addition was fabricated by spark plasma sintering method, after which these bulk materials were kept at isothermal temperature from 500℃up to 700℃. Microstructure analysis was then performed to evaluate the Si addition on the interface reaction. The results show that the holding temperature was the critical factor determining the interface reaction occurring or not. When the temperature increase to 600℃, the second phases Ti3SiC2, which uniformly distributed in the sintered Al-4Si/10%Ti3SiC2 and Al-10Si/10%Ti3SiC2 composites, reacted with matrix and as a result the phase of Al4C3 and TiC was formed and grows into a strip-like structure during the isothermal treatment. When the content of Si was up to 20 w.t.%, Al4C3 and TiC can be observed as well but no evidence of the existing of strip-like structure can be found.
||Planned: None Selected