|About this Abstract
||2018 TMS Annual Meeting & Exhibition
||Surface Interactions in Materials
||Silane Compound Modification on SiO2 for the Efficient Copper Diffusion Barrier Layer and Adhesion Enhancer of Electroless Copper Plating
||Wei-Yen Wang, Tzu-Chien Wei
|On-Site Speaker (Planned)
In semiconductor industry, copper is the main metal for interconnecting multiple-layer structures. However, Cu will diffuse into the adjacent silicon dioxide layer even under moderate temperature, In addition, according to the International Technology Roadmap for Semiconductors report, the necessary barrier thickness for the line-width of 22 nm is less than 2 nm. It is more difficult to obtain the thin diffusion barrier by using conventional vapor-phase deposition methods. In this study, we used a cost-effective wet-soaking method to modify SiO2 surface using 3-[2-(2-aminoethylamino)ethylamino] propyl-trimethoxysilane (ETAS) by forming a self-assembled monolayer (SAM). Combining with home-made Pd nanoparticle catalyst, copper layer can be electroless-deposited (ELD-Cu) onto ETAS-modified SiO2 surface. Due to strong chemical interaction between ETAS and Pd, both the adhesion of ELD-Cu and diffusion barrier effect is significantly enhanced. In this report, we also discuss the influence of diffusion barrier property between ETAS, PVA-Pd and ELD-Cu layers using rapid thermal annealing.
||Planned: Supplemental Proceedings volume