Compared to conventional amorphous silicon TFTs, amorphous metal oxide TFTs have superior device performance. Compared with sputtered oxide TFTs, metal oxide TFTs with solution processes have better flexibility and controllability to adjust the composition of chemical solution. Among various solution-based approaches, direct printing is a promising low-cost technique in fabricating TFTs. While many printed OTFTs have been reported, relatively fewer studies, associated with printed metal oxide TFTs, have been pursued. Interests to printed metal oxide TFTs have grown continuously since the first report of a general route towards printed oxide TFTs. In this report, the development of printed metal oxide TFTs will be discussed including the ink formulations, the types and characteristics of the applied printers, and fabricated thin film transistor characteristics. Lastly the report will be concluded with a concise summary and future outlook from an industry perspective.