Abstract Scope |
This study explores the structural behavior of Si(111) and polycrystalline diamond film on Si(111) in response to high-energy laser (HEL) irradiation. Following an ISO protocol, experiments were designed to measure the laser-induced damage threshold (LIDT) using ArF 193 nm and 5 ns pulses. The LIDT values are found to be 0.34 mJ/cm2 and 1.18 mJ/cm2 for Si and diamond/Si, respectively. For Si, when the laser fluence is in a range of less than 1.18 mJ/cm2, typical wave-ripple irradiation pattern appears along a direction seemly irrelevant to the crystal orientation. A turbulent pattern followed by burst structure occurs at high fluence of above 2.25 mJ/cm2. The surface undulation largely consists of amorphous Si. On diamond/Si, no obvious wave-ripple pattern forms after the irradiation. Instead, diamond cracks and breaks from the substrate as the fluence increases. Structural details of the irradiation area are further analyzed by TEM using FIB-prepared specimens. |