|About this Abstract
||2016 TMS Annual Meeting & Exhibition
||Phase Stability, Phase Transformations, and Reactive Phase Formation in Electronic Materials XV
||Contact-Resistance Reduction for Cu(Ti)/Conductive-Oxide-Film Junctions
||Kazuhiro Ito, Kazuyuki Kohama, Takayuki Sano, Atsushi Nishibata, Toshihide Nabatame, Akihiko Ohi
|On-Site Speaker (Planned)
Amorphous indium-gallium-zinc-oxide (IGZO) semiconductor is used as a channel material in high-performance thin film transistor (TFT) devices. Recently, Ti-oxide layer formed at the Cu(Ti)/indium-tin-oxide (ITO) junction is suggested to be conductive, and Cu(Ti)/ITO junctions after annealing at more than 300°C exhibited contact resistances less than device’s requirement (4×10-4 Ωcm2). Thus, the Cu(Ti) alloy electrode is expected to be a good contact material for IGZO-TFT devices. In this study, sputter-deposited Cu(Ti) alloy films on IGZO/glass substrates were annealed at 275-350°C in an N2 atmosphere. Ti atoms segregated at the Cu(Ti)-film surface and the Cu(Ti)/IGZO interface, and the thin TiOx layer was found to form at the interface. Its contact resistance was lower than those for the conventional Ti/Au electrodes, and decreased with increasing annealing temperature, suggesting growth of the TiOx layer. Thus, the Cu(Ti) alloy electrode was demonstrated to be a good contact material for IGZO-TFT devices comparing the conventional electrode.
||Planned: A print-only volume