|About this Abstract
||2018 TMS Annual Meeting & Exhibition
||Advanced Real Time Optical Imaging
||Real-time Observation of Solution Growth Interface of SiC Using Alloy Solvent
||Sakiko Kawanishi, Takeshi Yoshikawa, Kazuki Morita
|On-Site Speaker (Planned)
SiC is a promising material used for energy-saving power devices. Solution growth of 4H-SiC is a candidate to obtain high quality bulk single crystals because the growth progresses close to the thermal equilibrium. The growth rate has been greatly improved by adding transition metals as solvent components. Drastic reduction of the dislocation density has been also reported. However, microscopic phenomena during the growth are not well understood. We have thus established a real-time observation technique of SiC/solution interface at high temperature by using an optical microscope. The transparency of SiC for visible light enables the high temperature SiC/solution interface to be visualized. The height information can be also measured from the interference observation. By using this technique, interface behaviors were observed up to 1973 K. The findings for the control of growth interface such as evolution of step bunching and the competitions of growth domains will be presented.
||Planned: Supplemental Proceedings volume