Abstract Scope |
ABO3 oxides have been highlighted as an alternative material for thermoelectric (TE) generators, which convert heat energy into electricity. The TE efficiency is mainly dependent on the intrinsic properties such as the thermopower and electrical conductivity of oxides, where oxygen defects play a determining role in such properties. In this regard, using epitaxial strain induced by the lattice mismatch between the film and the substrate is a promising approach to modulate the concentration of oxygen defects controlling the TE efficiency. However, the influence of strain on the thermoelectric properties of oxide materials is not fully understood. In this study, using epitaxial La0.8Sr0.2CoO3 thin films as a model system, we investigate the effect of strain-controlled oxygen defects on the thermoelectric properties of oxides. Films with zero-, tensile-, compressive strain are evaluated in terms of oxygen vacancies, thermopower, and electrical conductivity. We show that strain can effectively control the TE efficiency. |