|About this Abstract
||2017 TMS Annual Meeting & Exhibition
||Advanced Characterization Techniques for Quantifying and Modeling Deformation Mechanisms
||Characterization of Dislocation Pile-ups at Special Angle Tilt Boundaries in Pure Nickel by Electron Channeling Contrast Imaging (ECCI) and Molecular Dynamics Simulations
||Shanoob Balachandran, James Seal, Jialin Liu, Yue Qi, Martin Crimp
|On-Site Speaker (Planned)
Using the novel SEM based Electron Channeling Contrast Imaging (ECCI) technique, dislocations in polycrystalline pure Nickel, subjected to annealing at 815 °C and four-point bend testing, were characterized. Dislocation pile-ups have been characterized at incoherent Σ3 9R asymmetric tilt boundaries, which typically exist at the ends of coherent Σ3 boundaries in annealing twins in fcc crystals. The Burgers vectors and slip plane of the dislocations in the pile-ups were determined by standard channeling contrast and trace analysis. This analysis reveals that the pile-up dislocations have common Burgers vectors and slip planes across the boundaries, indicating full slip compatibility across the boundaries and that the slip resistance can be fully attributed to the disordered nature at the boundaries. Molecular dynamics simulations have been carried out in an effort to better understand the slip resistance that develops at these common boundaries.
||Planned: Supplemental Proceedings volume