|About this Abstract
||2018 TMS Annual Meeting & Exhibition
||Frontiers in Advanced Functional Thin Films and Nanostructured Materials
||Diamond Epitaxy for High Power and High Temperature Electronics
||Robert J Nemanich, Franz A. Koeck, Maitreya Dutta, Raghuraj Hathwar, Mehdi Saremi, Srabanti Chowdhury, Stephen M. Goodnick
|On-Site Speaker (Planned)
||Robert J Nemanich
The properties of diamond that contribute to its value in power electronics include high electron and hole mobilities, high breakdown field, and highest thermal conductivity. A crucial aspect for bipolar devices is achieving n-type character during homoepitaxial growth. For (111) diamond, results show the P-doping concentration can be controlled by substrate temperature and TMP gas phase concentration. For (100) surfaces, P incorporation is achieved using a pulsed growth approach. The temperature dependence of PIN diodes fabricated using diamond epitaxy have been measured to >300°C: for (100) diodes the n-type layer is fully depleted and transport is limited by thermionic emission, whereas on (111) the n-type nature and bipolar transport is confirmed with the observation of light emission at forward bias. The diodes showed a strong increase in the saturation current density as the temperature was increased.
Research support: NASA through HOTTech program and ARPA-E through SWITCHES program.
||Planned: Supplemental Proceedings volume