|About this Abstract
||2016 TMS Annual Meeting & Exhibition
||Emerging Interconnect and Pb-free Materials for Advanced Packaging Technology
||Effect of Electromigration on Crystal Orientation in Wafer Level Chip Scale Package Using Synchrotron X-ray Diffraction
||Quan Zhao, Choong-un Kim, , Tae-kyu Lee
|On-Site Speaker (Planned)
Microstructural evolution of Sn-Ag-Cu solder joints have been examined during thermal cycling on wafer level chip scale packages using electron backscatter pattern mapping of the edge row, and with in-situ synchrotron x-ray diffraction, showing that the dominant crystal orientations do not change significantly, though regions near the package interface undergo recrystallization. In contrast, similar experiments on small 5x5 array wafer level chip scale packages with 6 amp current flow for 45 hr in three corner joints revealed large changes in crystal orientation when diffraction patterns measured before and after current stressing were compared. An additional set of in-situ experiments were conducted, where x-ray measurements were made during current flow with sequentially increasing currents to observe effects of current with time. Synchrotron measurements are compared with polished cross sections of the same joints to assess the influence of initial crystal orientation and current stressing on orientation and microstructure change.
||Planned: A print-only volume