|About this Abstract
||2018 TMS Annual Meeting & Exhibition
||Recent Developments in Biological, Structural and Functional Thin Films & Coatings
||Stresses and Strains Effect on Light Emission from Indirect-bandgap Semiconductors
||Sufian Abedrabbo, Nuggehalli M. Ravindra, Anthony T. Fiory
|On-Site Speaker (Planned)
Semiconductor surface properties have been proven to be dramatically modified by stresses and strains. The modified properties maybe related to various mechanisms with alterations and modulations in the bandgap of the semiconductors representing one of them. In this work, a study of the enhanced optical properties for indirect-bandgap semiconductors due to stresses and strains formed by different processes is presented. Various results obtained by this research group and other groups including published and not-published work are discussed. Engineered stresses and strains discussed are formed by: Ion implantation, sol-gel deposited films, high-density plasma chemical vapor deposition, and thermal oxidation techniques.
||Planned: Supplemental Proceedings volume