|About this Abstract
||2010 Electronic Materials Conference
||TMS 2010 Electronic Materials Conference
||LATE NEWS: D5, Initial Studies on Microwave and Terahertz Detection Using AlN/GaN HEMTs
||Berardi Sensale-Rodriguez, Lei Liu, Ze Zhang, Paul Saunier, Tom Zimmermann, Yu Cao, Debdeep Jena, Patrick Fay, Huili (Grace) Xing
|On-Site Speaker (Planned)
We report the initial results of our work on development of microwave and terahertz detectors using AlN/GaN high electron mobility transistors. Microwave measurements (up to 45 GHz) were performed showing that the devices work in a non-resonant mode where responsivity has a quadratic dependence of frequency. Also, the correlation between gate leakage and responsivity was experimentally studied, and a study of the expected performance of one of the measured devices at THz frequencies was carried out, showing the possibility of working at terahertz frequencies with high responsivities even in a non resonant mode.