|About this Abstract
||2017 TMS Annual Meeting & Exhibition
||Emerging Interconnect and Pb-free Materials for Advanced Packaging Technology
||Mechanisms of Copper Pumping and Its Impact on the Reliability of 3D Electronic Devices
||Hanry Yang, Tae-Kyu Lee, Indranath Dutta
|On-Site Speaker (Planned)
Copper-pumping, which occurs due to plastic deformation of the ends of through-silicon-vias (TSVs) and/or diffusionally accommodated sliding at Cu-barrier layer-Si interfaces, can result in intrusion or protrusion of TSVs during fabrication or service. It may be induced by thermal-cycling and/or passage of an electric current (i.e., electromigration), and can adversely impact the reliability of back-end-of-line (BEOL) and redistribution-layer (RDL) structures. In this paper, we report on the construct of a deformation mechanism map for copper-pumping in a heating rate vs. temperature field, and investigate its impact on damage mechanisms in the RDL/BEOL layers, including distortion and delamination. Finally, we report on the kinetics of copper-pumping due to electromigration, and assess its effect on RDL/BEOL stability. Experimental and simulation results on copper pumping under thermal cycling, with and without applied electric current, will be presented to rationalize the experimental results.
||Planned: Supplemental Proceedings volume